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"shei shih chang"的相關文件
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| 國立成功大學 |
2009-04-15 |
GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer
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Weng, W. Y.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L.; Hung, S. C. |
| 國立成功大學 |
2009 |
GaN MSM Photodetectors with a Semi-Insulating AlInN Cap Layer and Sputtered ITO Transparent Electrodes
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Weng, W. Y.; Chuang, Ricky W.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L. |
| 國立成功大學 |
2009 |
GaN-Based LED with Embedded Microlens-like Structure
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Lai, Wei-Chih; Peng, Li-Chi; Chang, Ming-Nan; Shei, Shih-Chang; Hsu, Y. P.; Sheu, Jinn-Kong |
| 國立成功大學 |
2008-09-08 |
Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads
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Sheu, Jinn-Kong; Hung, I-Hsiu; Lai, Wei-Chih; Shei, Shih-Chang; Lee, M. L. |
| 國立成功大學 |
2008-09 |
Nitride-Based LEDs With a Hybrid Al Mirror +TiO2/SiO2 DBR Backside Reflector
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Chang, Shoou-Jinn; Shen, C. F.; Hsieh, M. H.; Kuo, C. T.; Ko, T. K.; Chen, W. S.; Shei, Shih-Chang |
| 國立成功大學 |
2008-07 |
Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-based LEDs
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Jang, Chung-Hsun; Sheu, Jinn-Kong; Tsai, C. M.; Shei, Shih-Chang; Lai, W. C.; Chang, Shoou-Jinn |
| 國立成功大學 |
2007-11 |
Highly reliable high-brightness GaN-based flip chip LEDs
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Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang; Ko, T. K.; Shen, C. F.; Hsu, Y. P.; Chang, C. S.; Tsai, J. M.; Lai, W. C.; Lin, A. J. |
| 國立成功大學 |
2007-07-02 |
Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography
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Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Kuo, C. T.; Ko, T. K.; Shei, Shih-Chang; Sheu, Jinn-Kong |
| 國立成功大學 |
2007-06 |
GaN-based power LEDs with CMOS ESD protection circuits
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Horng, J. J.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang |
| 國立成功大學 |
2007-05-15 |
Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate
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Shen, C. F.; Chang, Shoou-Jinn; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang |
| 國立成功大學 |
2007-05 |
Nitride-based Schottky barrier sensor module with high electrostatic discharge reliability
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Horng, J. J.; Su, Yan-Kuin; Chang, Shoou-Jinn; Ko, T. K.; Shei, Shih-Chang |
| 國立成功大學 |
2007-05 |
Improved reliability and ESD characteristics of flip-chip GaN-based LEDs with internal inverse-parallel protection diodes
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Shei, Shih-Chang; Sheu, Jinn-Kong; Shen, Chien-Fu |
| 國立成功大學 |
2007-04-15 |
AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates
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Chang, Shoou-Jinn; Ko, T. K.; Sheu, Jinn-Kong; Shei, Shih-Chang; Lai, W. C.; Chiou, Y. Z.; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Shen, C. F. |
| 國立成功大學 |
2007 |
Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes
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Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Yu, Kuo-Hui; Shei, Shih-Chang; Chiou, Y. Z. |
| 國立成功大學 |
2006-11 |
Nitride-based light emitting diodes with textured sidewalls and pillar waveguides
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Shen, C. F.; Chang, Shoou-Jinn; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang; Chen, W. S.; Lee, Ching-Ting; Chang, C. S.; Chiou, Yu-Zung |
| 國立成功大學 |
2006-09 |
Highly reliable nitride-based LEDs with internal ESD protection diodes
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Chang, Shoou-Jinn; Shen, C. F.; Shei, Shih-Chang; Chuang, R. W.; Chang, C. S.; Chen, W. S.; Ko, T. K.; Sheu, Jinn-Kong |
| 國立成功大學 |
2006-08 |
Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors
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Chang, Shoou-Jinn; Chen, W. S.; Lin, Y. C.; Chang, C. S.; Ko, T. K.; Hsu, Y. P.; Shen, C. F.; Tsai, J. M.; Shei, Shih-Chang |
| 國立成功大學 |
2006-08 |
Nitride-based flip-chip p-i-n photodiodes
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Ko, T. K.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S.; Shen, C. F. |
| 國立成功大學 |
2006-08 |
Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors
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Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Wang, C. K.; Sheu, Jinn-Kong; Lai, W. C. |
| 國立成功大學 |
2006-08 |
AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers
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Ko, T. K.; Chang, Shoou-Jinn; Sheu, Jinn-Kong; Shei, Shih-Chang; Chiou, Yu-Zung; Lee, M. L.; Shen, C. F.; Chang, S. P.; Lin, K. W. |
| 國立成功大學 |
2006-08 |
InGaN p-i-n ultraviolet - A band-pass photodetectors
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Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Chiou, Yu-Zung; Lin, R. M.; Chen, W. S.; Shen, C. F.; Chang, C. S.; Lin, K. W. |
| 國立成功大學 |
2006-06 |
High efficiency and improved ESD characteristics of GaN-Based LEDs with naturally textured surface grown by MOCVD
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Tsai, C. M.; Sheu, Jinn-Kong; Wang, P. T.; Lai, W. C.; Shei, Shih-Chang; Chang, Shoou-Jinn; Kuo, C. H.; Kuo, C. W.; Su, Yan-Kuin |
| 國立成功大學 |
2006-04 |
Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes
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Shei, Shih-Chang; Sheu, Jinn-Kong; Tsai, Chi-Ming; Lai, Wei-Chi; Lee, Ming-Lun; Kuo, Cheng-Huang |
| 國立成功大學 |
2006-04 |
GaN-based p-i-n sensors with ITO contacts
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Chang, Shoou-Jinn; Ko, T. K.; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S. |
| 國立成功大學 |
2006-03-13 |
InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface
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Sheu, Jinn-Kong; Tsai, C. M.; Lee, M. L.; Shei, Shih-Chang; Lai, W. C. |
顯示項目 31-55 / 75 (共3頁)
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