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Showing items 16-25 of 36  (4 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:40:06Z Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications Liu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM
國立交通大學 2014-12-08T15:39:45Z CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY
國立交通大學 2014-12-08T15:39:43Z Investigation of the electrical properties and reliability of amorphous SiCN Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Huang, HC; Chen, JM; Tseng, CH; Liu, CC; Tseng, TY
國立交通大學 2014-12-08T15:39:42Z CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T
國立交通大學 2014-12-08T15:39:16Z Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY
國立交通大學 2014-12-08T15:37:10Z Study on etching profile of nanoporous silica Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Wu, HH; Tseng, TY
國立交通大學 2014-12-08T15:37:10Z Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Tseng, TY
國立交通大學 2014-12-08T15:37:10Z Cu-penetration induced breakdown mechanism for a-SiCN Chen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY
國立交通大學 2014-12-08T15:37:06Z Effects of oxygen plasma ashing on barrier dielectric SiCN film Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Tseng, TY
國立交通大學 2014-12-08T15:36:06Z Electrical degradation of N-channel poly-Si TFT under AC stress Chen, CW; Chang, TC; Liu, PT; Lu, HY; Tsai, TM; Weng, CF; Hu, CW; Tseng, TY

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