|
"tzeng wen hsien"的相关文件
显示项目 11-19 / 19 (共1页) 1 每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:22:56Z |
Resistance Switching in Ni/HfOx/Ni Nonvolatile Memory Device with CF4/O-2 Plasma Post-treatment
|
Lai, Chiung-Hui; Chang, Te-Shun; Tzeng, Wen-Hsien; Chang, Kow-Ming |
| 國立交通大學 |
2014-12-08T15:22:23Z |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:21:15Z |
Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Huang, Jiun-Jie; Lee, Yun-Ju; Yeh, Ping-Hung; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:13:49Z |
The resistive switching characteristics of a Ti/Gd(2)O(3)/Pt RRAM device
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Cheng, Chun-Wen |
| 國立交通大學 |
2014-12-08T15:05:35Z |
The effect of plasma deposition on the electrical characteristics of Pt/HfO(x)/TiN RRAM device
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Wu, Chi-Hung |
| 國立交通大學 |
2014-12-08T15:03:14Z |
The Ge Enhance the Sensitivity for Bio-Sensor
|
Chang, Kow-Ming; Kuo, Jiun-Ming; Chao, Wen-Chan; Liang, Chia-Jung; Wu, Heng-Hsin; Tzeng, Wen-Hsien; Wu, Tzu-liu |
| 國立交通大學 |
2014-12-08T15:03:13Z |
Higher Drive Current for SiGe Nanowires
|
Chang, Kow-Ming; Kuo, Jiun-Ming; Wu, Heng-Hsin; Tzeng, Wen-Hsien; Wu, Tzu-liu; Chao, Wen-Chan |
| 國立臺灣大學 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 臺大學術典藏 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; Tzeng, Wen-Hsien; Tsai, Feng-Yu et al. |
显示项目 11-19 / 19 (共1页) 1 每页显示[10|25|50]项目
|