臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Showing items 1-15 of 15 (1 Page(s) Totally)
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Institution	Date	Title	Author
國立臺灣海洋大學	2009-11	Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors	Wen-Chau Liu; Ghun-Wei Ku; Der-Feng Guo; Jung-Hui Tsai; Wen-Shiung Lour; Shiou-Ying Cheng; Chi-Jhung Lee; Tzu-Pin Chen
義守大學	2009-04	On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure	Chih-Hung Yen; Yi-Jung Liu;Kuo-Hui Yu;Pei-Ling Lin;Tzu-Pin Chen; Li-Yang Chen; Tsung-Han Tsai; Nan-Yi Huang; Chong-Yi Lee; Wen-Chau Liu
國立高雄師範大學	2009	On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistors	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Ghun-Wei Ku;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	On an InP/InGaAs heterobipolar transistor with an InAlGaAs/InP step-graded heterostructure collector	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Kun-Wei Lin;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學	2009	On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)	Tzu-Pin Chen; Chi-Jhung Lee; Wen-Shiung Lour; Der-Feng Guo; Jung-Hui Tsai; Wen-Chau Liu
國立臺灣海洋大學	2008-12-09	Effect of Emitter Ledge Thickness on InGaP ∕ GaAs Heterojunction Bipolar Transistors	Tzu-Pin Chen; Chi-Jhung Lee; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Ghun-Wei Ku; Wen-Chau Liu
義守大學	2008-11	A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure	Chih-Hung Yen; Yi-Jung Liu; Nan-Yi Huang; Kuo-Hui Yu; Tzu-Pin Chen; Li-Yang Chen; Tsung-Han Tsai; Chong-Yi Lee; Wen-Chau Liu;
國立高雄師範大學	2008	Effect of non-annealed Ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor	Jung-Hui Tsai;Li-Yang Chen;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Tsung-Han Tsai;Tzu-Pin Chen;Yi-Chun Liu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2008	Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors	Jung-Hui Tsai;Kuei-Yi Chu;Shiou-Ying Cheng;Tzu-Pin Chen;Li-Yang Chen;Tsung-Han Tsai;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學	2008	Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor	Li-Yang Chen; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Tsung-Han Tsai; Tzu-Pin Chen; Yi-Chun Liu; Wen-Chau Liu
國立高雄師範大學	2007	Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors	Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Shiou-Ying Cheng;Der-Feng Guo;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure	Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Improved performance of a composite passivate heterojunction bipolar transistor (HBT)	Jung-Hui Tsai;Ssu-Yi Fu;Tzu-Pin Chen;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學	2006	Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor	Tzu-Pin Chen;Ssu-I Fu;Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Shiou-Ying Cheng;Wen-Chau Liu

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