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机构 日期 题名 作者
國立臺灣海洋大學 2009-11 Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors Wen-Chau Liu; Ghun-Wei Ku; Der-Feng Guo; Jung-Hui Tsai; Wen-Shiung Lour; Shiou-Ying Cheng; Chi-Jhung Lee; Tzu-Pin Chen
義守大學 2009-04 On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure Chih-Hung Yen; Yi-Jung Liu;Kuo-Hui Yu;Pei-Ling Lin;Tzu-Pin Chen; Li-Yang Chen; Tsung-Han Tsai; Nan-Yi Huang; Chong-Yi Lee; Wen-Chau Liu
國立高雄師範大學 2009 On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2009 Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistors Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Ghun-Wei Ku;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2009 On an InP/InGaAs heterobipolar transistor with an InAlGaAs/InP step-graded heterostructure collector Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Kun-Wei Lin;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學 2009 On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) Tzu-Pin Chen; Chi-Jhung Lee; Wen-Shiung Lour; Der-Feng Guo; Jung-Hui Tsai; Wen-Chau Liu
國立臺灣海洋大學 2008-12-09 Effect of Emitter Ledge Thickness on InGaP ∕ GaAs Heterojunction Bipolar Transistors Tzu-Pin Chen; Chi-Jhung Lee; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Ghun-Wei Ku; Wen-Chau Liu
義守大學 2008-11 A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure Chih-Hung Yen; Yi-Jung Liu; Nan-Yi Huang; Kuo-Hui Yu; Tzu-Pin Chen; Li-Yang Chen; Tsung-Han Tsai; Chong-Yi Lee; Wen-Chau Liu;
國立高雄師範大學 2008 Effect of non-annealed Ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor Jung-Hui Tsai;Li-Yang Chen;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Tsung-Han Tsai;Tzu-Pin Chen;Yi-Chun Liu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2008 Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors Jung-Hui Tsai;Kuei-Yi Chu;Shiou-Ying Cheng;Tzu-Pin Chen;Li-Yang Chen;Tsung-Han Tsai;Wen-Chau Liu; 蔡榮輝

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