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國立交通大學 |
2014-12-08T15:37:23Z |
Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu m
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Wang, JS; Hsiao, RS; Lin, G; Lin, KF; Liu, HY; Lai, CM; Wei, L; Liang, CY; Chi, JY; Kovsh, AR; Maleev, NA; Livshits, DA; Chen, JF; Yu, HC; Ustinov, VM |
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