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"wang js"的相关文件
显示项目 26-50 / 95 (共4页)
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| 國立交通大學 |
2014-12-08T15:45:42Z |
Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
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Chen, JF; Wang, PY; Wang, JS; Chen, NC; Guo, XJ; Chen, YF |
| 國立交通大學 |
2014-12-08T15:45:42Z |
Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes
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Chen, JF; Wang, PY; Wang, JS; Tsai, CY; Chen, NC |
| 國立交通大學 |
2014-12-08T15:45:39Z |
Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs Schottky diodes
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Chen, JF; Chen, NC; Wang, JS; Wang, PY |
| 國立交通大學 |
2014-12-08T15:45:22Z |
Annealing dynamics of nitrogen-implanted GaAs films investigated by current-voltage and deep-level transient spectroscopy
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Chen, JF; Wang, JS; Huang, MM; Chen, NC |
| 國立交通大學 |
2014-12-08T15:45:13Z |
Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
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Chen, JF; Wang, PY; Wang, JS; Wong, HZ |
| 國立交通大學 |
2014-12-08T15:44:38Z |
Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots
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Wang, JS; Chen, JF; Huang, JL; Wang, PY; Guo, XJ |
| 國立交通大學 |
2014-12-08T15:44:13Z |
Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes
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Chen, JF; Chen, NC; Wang, JS; Chen, YF |
| 國立交通大學 |
2014-12-08T15:43:53Z |
Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs
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Chen, JF; Huang, MM; Wang, JS |
| 國立交通大學 |
2014-12-08T15:41:13Z |
Epidemiology of haptoglobin phenotypes in chronic diseases
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Cheng, TM; Pan, JP; Wang, JS; Mao, SJT |
| 國立交通大學 |
2014-12-08T15:39:36Z |
High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxy
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Wang, JS; Kovsh, AR; Hsiao, RS; Chen, LP; Chen, JF; Lay, TS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:38:32Z |
Properties of defect traps in triple-stack InAs/GaAs quantum dots and effect of annealing
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Chen, JF; Hsiao, RS; Shih, SH; Wang, PY; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:37:23Z |
Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu m
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Wang, JS; Hsiao, RS; Lin, G; Lin, KF; Liu, HY; Lai, CM; Wei, L; Liang, CY; Chi, JY; Kovsh, AR; Maleev, NA; Livshits, DA; Chen, JF; Yu, HC; Ustinov, VM |
| 國立交通大學 |
2014-12-08T15:37:14Z |
Single mode 1.3 mu m InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy
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Hsiao, RS; Wang, JS; Lin, KF; Wei, L; Liu, HY; Liang, CY; Lai, CM; Kovsh, AR; Maleev, NA; Chi, JY; Chen, JF |
| 國立交通大學 |
2014-12-08T15:19:34Z |
Efg1 involved in drug resistance by regulating the expression of ERG3 in Candida albicans
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Lo, HJ; Wang, JS; Lin, CY; Chen, CG; Hsiao, TY; Hsu, CT; Su, CL; Fann, MJ; Ching, YT; Yang, YL |
| 國立交通大學 |
2014-12-08T15:19:20Z |
Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy
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Chang, KP; Yang, SL; Chuu, DS; Hsiao, RS; Chen, JF; Wei, L; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:19:19Z |
High-performance 30-period quantum-dot infrared photodetector
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Chou, ST; Lin, SY; Hsiao, RS; Chi, JY; Wang, JS; Wu, MC; Chen, JF |
| 國立交通大學 |
2014-12-08T15:18:47Z |
Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs
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Chen, JF; Hsiao, RS; Wang, CK; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:32Z |
Recombination dynamics of luminescence in colloidal CdSe/ZrS quantum dots
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Lee, WZ; Shu, GW; Wang, JS; Shen, JL; Lin, CA; Chang, WH; Ruaan, RC; Chou, WC; Lu, CH; Lee, YC |
| 國立交通大學 |
2014-12-08T15:18:29Z |
Effect of nitrogen incorporation into InAs layer in InAs/InGaAs self-assembled quantum dots
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Chen, JF; Hsiao, RS; Chen, YC; Chen, YP; Hsieh, MT; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:15Z |
Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition
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Chen, IL; Hsu, WC; Kuo, HC; Yu, HC; Sung, CP; Lu, CM; Chiou, CH; Wang, JM; Chang, YH; Lee, TD; Wang, JS |
| 國立交通大學 |
2014-12-08T15:18:12Z |
Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling
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Chen, JF; Hsiao, RS; Chen, YP; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:17:54Z |
N incorporation into InGaAs cap layer in InAs self-assembled quantum dots
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Chen, JF; Hsiao, RS; Hsieh, PC; Chen, YJ; Chen, YP; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:17:54Z |
Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers
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Wang, JS; Lin, G; Hsiao, RS; Yang, CS; Lai, CM; Liang, CY; Liu, HY; Chen, TT; Chen, YF; Chi, JY; Chen, JF |
| 國立交通大學 |
2014-12-08T15:17:44Z |
Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots
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Chen, JF; Hsiao, RS; Hsieh, MF; Wang, JS; Chi, JY |
| 國立交通大學 |
2014-12-08T15:17:42Z |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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Yu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S |
显示项目 26-50 / 95 (共4页)
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