|
"wang js"的相關文件
顯示項目 26-35 / 95 (共10頁)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:45:42Z |
Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
|
Chen, JF; Wang, PY; Wang, JS; Chen, NC; Guo, XJ; Chen, YF |
| 國立交通大學 |
2014-12-08T15:45:42Z |
Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes
|
Chen, JF; Wang, PY; Wang, JS; Tsai, CY; Chen, NC |
| 國立交通大學 |
2014-12-08T15:45:39Z |
Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs Schottky diodes
|
Chen, JF; Chen, NC; Wang, JS; Wang, PY |
| 國立交通大學 |
2014-12-08T15:45:22Z |
Annealing dynamics of nitrogen-implanted GaAs films investigated by current-voltage and deep-level transient spectroscopy
|
Chen, JF; Wang, JS; Huang, MM; Chen, NC |
| 國立交通大學 |
2014-12-08T15:45:13Z |
Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
|
Chen, JF; Wang, PY; Wang, JS; Wong, HZ |
| 國立交通大學 |
2014-12-08T15:44:38Z |
Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots
|
Wang, JS; Chen, JF; Huang, JL; Wang, PY; Guo, XJ |
| 國立交通大學 |
2014-12-08T15:44:13Z |
Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes
|
Chen, JF; Chen, NC; Wang, JS; Chen, YF |
| 國立交通大學 |
2014-12-08T15:43:53Z |
Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs
|
Chen, JF; Huang, MM; Wang, JS |
| 國立交通大學 |
2014-12-08T15:41:13Z |
Epidemiology of haptoglobin phenotypes in chronic diseases
|
Cheng, TM; Pan, JP; Wang, JS; Mao, SJT |
| 國立交通大學 |
2014-12-08T15:39:36Z |
High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxy
|
Wang, JS; Kovsh, AR; Hsiao, RS; Chen, LP; Chen, JF; Lay, TS; Chi, JY |
顯示項目 26-35 / 95 (共10頁)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
每頁顯示[10|25|50]項目
|
