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Taiwan Academic Institutional Repository >
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"wang th"
Showing items 11-35 of 118 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:48:54Z |
Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique
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Wang, TH; Chang, TE; Chiang, LP; Wang, CH; Zous, NK; Huang, CM |
| 國立交通大學 |
2014-12-08T15:48:47Z |
Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique
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Wang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C |
| 國立交通大學 |
2014-12-08T15:46:18Z |
Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides
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Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM |
| 國立交通大學 |
2014-12-08T15:46:14Z |
A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's
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Wang, TH; Chiang, LP; Zous, NK; Hsu, CF; Huang, LY; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:34Z |
Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology
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Wang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:44:15Z |
Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction
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Wang, HCH; Wang, CC; Chang, CS; Wang, TH; Griffin, PB; Diaz, CH |
| 國立交通大學 |
2014-12-08T15:43:58Z |
On-chip ESD protection design by using polysilicon diodes in CMOS process
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Ker, MD; Chen, TY; Wang, TH; Wu, CY |
| 國立交通大學 |
2014-12-08T15:43:09Z |
Inequalities between Dirichlet and Neumann eigenvalues for domains in spheres
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Hsu, YJ; Wang, TH |
| 國立交通大學 |
2014-12-08T15:43:07Z |
A global pinching theorem for surfaces with constant mean curvature in S-3
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Hsu, YJ; Wang, TH |
| 國立交通大學 |
2014-12-08T15:42:55Z |
Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices
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Wang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:42:37Z |
Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage
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Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH |
| 國立交通大學 |
2014-12-08T15:41:47Z |
Role of positive trapped charge in stress-induced leakage current for flash EEPROM devices
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Wang, TH; Zous, NK; Yeh, CC |
| 國立交通大學 |
2014-12-08T15:41:10Z |
A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memories
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Yeh, CC; Fan, TH; Lu, TC; Wang, TH; Pan, S; Lu, CY |
| 國立交通大學 |
2014-12-08T15:41:07Z |
Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias
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Tsai, CW; Chen, MC; Ku, SH; Wang, TH |
| 國立交通大學 |
2014-12-08T15:39:34Z |
Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell
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Tsai, WJ; Yeh, CC; Zous, NK; Liu, CC; Cho, SK; Wang, TH; Pan, SC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:39:14Z |
An endurance evaluation method for flash EEPROM
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Zous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:52Z |
Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell
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Liu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:44Z |
Pocket implantation effect on drain current flicker noise in analog nMOSFET devices
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Wu, JW; Cheng, CC; Chiu, KL; Guo, JC; Lien, WY; Chang, CS; Huang, GW; Wang, TH |
| 國立交通大學 |
2014-12-08T15:38:41Z |
Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors
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Chen, MC; Ku, SH; Chan, CT; Wang, TH |
| 國立交通大學 |
2014-12-08T15:38:37Z |
A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell
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Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:37Z |
Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology
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Zous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:31Z |
Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors
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Chen, MC; Ku, SH; Chan, CT; Wang, TH |
| 國立交通大學 |
2014-12-08T15:27:51Z |
INTERFACE TRAP INDUCED THERMIONIC AND FIELD EMISSION CURRENT IN OFF-STATE MOSFETS
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WANG, TH; CHANG, TE; HUANG, CM |
| 國立交通大學 |
2014-12-08T15:27:37Z |
Field enhanced oxide charge detrapping in n-MOSFET's
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Wang, TH; Chang, TE; Chiang, LP; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:37Z |
Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's
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Wang, TH; Chang, TE; Chiang, LP; Huang, CM; Guo, JC |
Showing items 11-35 of 118 (5 Page(s) Totally)
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