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"wang yl"的相关文件
显示项目 26-35 / 126 (共13页)
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| 國立交通大學 |
2014-12-08T15:47:23Z |
A modified multi-chemical spray cleaning process for post shallow trench isolation chemical mechanical polishing cleaning application
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Wang, YL; Wang, TC; Wu, J; Tseng, WT; Lin, CF |
| 國立交通大學 |
2014-12-08T15:46:28Z |
A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
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Lin, CF; Tseng, WT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:44:34Z |
Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric
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Lan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS |
| 國立交通大學 |
2014-12-08T15:43:22Z |
X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films
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Lee, HJ; Lin, EK; Wu, WL; Fanconi, BM; Lan, JK; Cheng, YL; Liou, HC; Wang, YL; Feng, MS; Chao, CG |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application
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Cheng, YL; Wang, YL; Liu, CW; Wu, YL; Lo, KY; Liu, CP; Lan, JK |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Integration of MOCVD titanium nitride with collimated titanium and ion metal plasma titanium for 0.18-mu m logic process
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Lan, JK; Wang, YL; Lo, KY; Liu, CP; Liu, CW; Wang, JK; Cheng, YL; Chau, CG |
| 國立交通大學 |
2014-12-08T15:42:45Z |
The removal selectivity of titanium and aluminum in chemical mechanical planarization
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Hsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:41:17Z |
Improving the quality of electroplated copper films by rapid thermal annealing
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:54Z |
Superpolishing for planarizing copper damascene interconnects
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; Shih, CH; Tsai, MH; Shue, SL; Liang, RS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:43Z |
Effect of substrate on the step coverage of plasma-enhanced chemical-vapor deposited tetraethylorthosilicate films
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Lan, JK; Wang, YL; Chao, CG; Lo, K; Cheng, YL |
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