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"wang yl"的相關文件
顯示項目 26-75 / 126 (共3頁)
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| 國立交通大學 |
2014-12-08T15:47:23Z |
A modified multi-chemical spray cleaning process for post shallow trench isolation chemical mechanical polishing cleaning application
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Wang, YL; Wang, TC; Wu, J; Tseng, WT; Lin, CF |
| 國立交通大學 |
2014-12-08T15:46:28Z |
A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
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Lin, CF; Tseng, WT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:44:34Z |
Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric
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Lan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS |
| 國立交通大學 |
2014-12-08T15:43:22Z |
X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films
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Lee, HJ; Lin, EK; Wu, WL; Fanconi, BM; Lan, JK; Cheng, YL; Liou, HC; Wang, YL; Feng, MS; Chao, CG |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application
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Cheng, YL; Wang, YL; Liu, CW; Wu, YL; Lo, KY; Liu, CP; Lan, JK |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Integration of MOCVD titanium nitride with collimated titanium and ion metal plasma titanium for 0.18-mu m logic process
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Lan, JK; Wang, YL; Lo, KY; Liu, CP; Liu, CW; Wang, JK; Cheng, YL; Chau, CG |
| 國立交通大學 |
2014-12-08T15:42:45Z |
The removal selectivity of titanium and aluminum in chemical mechanical planarization
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Hsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:41:17Z |
Improving the quality of electroplated copper films by rapid thermal annealing
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:54Z |
Superpolishing for planarizing copper damascene interconnects
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; Shih, CH; Tsai, MH; Shue, SL; Liang, RS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:43Z |
Effect of substrate on the step coverage of plasma-enhanced chemical-vapor deposited tetraethylorthosilicate films
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Lan, JK; Wang, YL; Chao, CG; Lo, K; Cheng, YL |
| 國立交通大學 |
2014-12-08T15:40:27Z |
Mechanisms of circular defects for shallow trench isolation oxide deposition
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Lan, JK; Wang, YL; Liu, CP; Chao, CG; Ay, CY; Liu, CW; Cheng, YL |
| 國立交通大學 |
2014-12-08T15:40:06Z |
The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
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Chiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Roles of copper mechanical characteristics in electropolishing
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Chang, SC; Shieh, JM; Fang, JY; Wang, YL; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:46Z |
Pattern-dependent copper microcorrosion from CMP
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Chen, KW; Wang, YL; Chang, L; Chang, SC; Li, FY; Lin, SH |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization
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Cheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect
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Chen, KW; Wang, YL; Liu, CP; Yang, K; Chang, L; Lo, KY; Liu, CW |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Copper surface protection with a completely enclosed copper structure for a damascene process
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Wang, TC; Hsieh, TE; Wang, YL; Wu, YL; Lo, KY; Liu, CW; Chen, KW |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Study on precipitations of fluorine-doped silicon oxide
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Wu, J; Wang, YL; Liu, CP; Chang, SC; Kuo, CT; Ay, C |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
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Cheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Monitor and eliminate the circular defects in HDP-STI deposition through oxynitride/oxide composite liner
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Lan, JK; Wang, YL; Liu, CP; Lee, WH; Ay, C; Cheng, YL; Chang, SC |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide
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Cheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:38:56Z |
Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application
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Cheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:38:39Z |
Direct COSi2 thin-film formation with homogeneous nanograin-size distribution by oxide-mediated silicidation
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Chang, JJ; Liu, CP; Chen, SW; Chang, CC; Hsieh, TE; Wang, YL |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Stress migration and electromigration improvement for copper dual damascene interconnection
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Wang, TC; Hsieh, TE; Wang, MT; Su, DS; Chang, CH; Wang, YL; Lee, JYM |
| 國立交通大學 |
2014-12-08T15:35:42Z |
Modified polycrystalline silicon chemical-vapor deposition process for improving roughness at oxide/polycrystalline silicon interface
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Chang, JJ; Hsieh, TE; Wang, YL; Tseng, WT; Liu, CP; Lan, CY |
| 國立交通大學 |
2014-12-08T15:26:47Z |
Novel strategies of FSG-CMP for within-wafer uniformity improvement and wafer edge yield enhancement beyond 0.18 micro technologies
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Chen, KW; Wang, YL; Chang, L; Liu, CW; Lin, YK; Wang, TC; Chang, ST; Lo, KY |
| 國立交通大學 |
2014-12-08T15:19:22Z |
Formation of pyramid-like nanostructures during cobalt film growth by magnetron sputtering
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Liu, CP; Chang, JJ; Chen, SW; Chung, HC; Wang, YL |
| 國立交通大學 |
2014-12-08T15:19:18Z |
Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
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Chiu, SY; Wang, YL; Chang, SC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:18:36Z |
Study of diffusion and quality control for CoSi2 formation by oxide-mediated cobalt silicidation with Ti capping
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Chang, JJ; Liu, CP; Hsieh, TE; Wang, YL |
| 國立交通大學 |
2014-12-08T15:17:41Z |
CoSix thermal stability on narrow-width polysilicon resistors
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Chen, YM; Tu, GC; Wang, YL; Hwang, GJ; Lo, CY |
| 國立交通大學 |
2014-12-08T15:17:21Z |
Investigation of overpotential and seed thickness on damascene copper electroplating
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Chen, KW; Wang, YL; Chang, L; Li, FY; Chang, SC |
| 國立交通大學 |
2014-12-08T15:17:21Z |
Heat, moisture and chemical resistance on low dielectric constant (low-k) film using diethoxymethylsilane (DEMS) prepared by plasma enhanced chemical vapor deposition
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Cheng, YL; Wang, YL; Lan, JK; Hwang, GJ; O'Neil, ML; Chen, CF |
| 國立交通大學 |
2014-12-08T15:17:21Z |
Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane
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Cheng, YL; Wang, YL; Hwang, GJ; O'Neill, ML; Karwacki, EJ; Liu, PT; Chen, CF |
| 國立交通大學 |
2014-12-08T15:17:21Z |
Precipitates formation and its impact on the structure of plasma-deposited fluorinated silicon oxide films
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Wu, J; Wang, YL; Kuo, CT |
| 國立交通大學 |
2014-12-08T15:17:21Z |
The study of diffusion and nucleation for COSi2 formation by oxide-mediated cobalt silicidation
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Chang, JJ; Liu, CP; Hsieh, TE; Wang, YL |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Characterization and thermal stability of fluorosilicate glass films deposited by high density plasma chemical vapor deposition with different bias power
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Hsiao, WC; Liu, CP; Wang, YL; Cheng, YL |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Mechanism for Cu void defect on various electroplated film conditions
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Feng, HP; Cheng, MY; Wang, YL; Chang, SC; Wang, YY; Wan, CC |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Effects of plasma treatment in the tungsten process for chemical vapor deposition titanium nitride barrier film beyond nanometer technology
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Chen, KW; Wang, YL; Chang, L; Li, FY; Hwang, GJ |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Uniform COSi2 nano-nucleus formation by oxide mediated silicidation with a Ti capping layer
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Chang, JJ; Hsieh, TE; Liu, CP; Wang, YL |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Oxide-mediated fort-nation of epitaxy silicide on heavily doped Si surfaces and narrow width active region
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Chen, YM; Tu, GC; Wang, YL |
| 國立交通大學 |
2014-12-08T15:17:18Z |
Width-dependent anomalous CoSix sheet resistance change by Ti and TiN capping process
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Chen, YM; Tu, GC; Wang, YL |
| 國立交通大學 |
2014-12-08T15:17:12Z |
Comparison of characteristics and integration of copper diffusion-barrier dielectrics
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Wang, TC; Cheng, YL; Wang, YL; Hsieh, TE; Hwang, GJ; Chen, CF |
| 國立交通大學 |
2014-12-08T15:17:12Z |
Novel slurry solution for dishing elimination in copper process beyond 0.1-mu m technology
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Chen, KW; Wang, YL; Liu, CP; Chang, L; Li, FY |
| 國立交通大學 |
2014-12-08T15:17:12Z |
High-selectivity damascene chemical mechanical polishing
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Chiu, SY; Wang, YL; Liu, CP; Chang, SC; Hwang, GJ; Feng, MS; Chen, CF |
| 國立交通大學 |
2014-12-08T15:02:02Z |
Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes
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Tseng, WT; Wang, YL |
| 國立交通大學 |
2014-12-08T15:01:30Z |
Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvement
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Wang, YL; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:01:23Z |
Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
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Wang, YL; Liu, C; Feng, MS; Dun, JW; Chou, KS |
| 國立交通大學 |
2014-12-08T15:01:23Z |
Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity
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Wang, YL; Liu, C; Chang, ST; Tsai, MS; Feng, MS; Tseng, WT |
| 國立交通大學 |
2014-12-08T15:01:09Z |
The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection
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Wang, YL; Liu, C; Feng, MS; Tseng, WT |
| 國立交通大學 |
2014-12-08T15:01:09Z |
A modified multi-chemicals spray cleaning process for post-CMP cleaning application
|
Wang, YL; Liu, C; Feng, MS; Tseng, WT |
顯示項目 26-75 / 126 (共3頁)
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