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"wang yl"的相關文件
顯示項目 46-70 / 126 (共6頁)
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| 國立交通大學 |
2014-12-08T15:39:16Z |
Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide
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Cheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:38:56Z |
Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application
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Cheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:38:39Z |
Direct COSi2 thin-film formation with homogeneous nanograin-size distribution by oxide-mediated silicidation
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Chang, JJ; Liu, CP; Chen, SW; Chang, CC; Hsieh, TE; Wang, YL |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Stress migration and electromigration improvement for copper dual damascene interconnection
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Wang, TC; Hsieh, TE; Wang, MT; Su, DS; Chang, CH; Wang, YL; Lee, JYM |
| 國立交通大學 |
2014-12-08T15:35:42Z |
Modified polycrystalline silicon chemical-vapor deposition process for improving roughness at oxide/polycrystalline silicon interface
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Chang, JJ; Hsieh, TE; Wang, YL; Tseng, WT; Liu, CP; Lan, CY |
| 國立交通大學 |
2014-12-08T15:26:47Z |
Novel strategies of FSG-CMP for within-wafer uniformity improvement and wafer edge yield enhancement beyond 0.18 micro technologies
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Chen, KW; Wang, YL; Chang, L; Liu, CW; Lin, YK; Wang, TC; Chang, ST; Lo, KY |
| 國立交通大學 |
2014-12-08T15:19:22Z |
Formation of pyramid-like nanostructures during cobalt film growth by magnetron sputtering
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Liu, CP; Chang, JJ; Chen, SW; Chung, HC; Wang, YL |
| 國立交通大學 |
2014-12-08T15:19:18Z |
Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
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Chiu, SY; Wang, YL; Chang, SC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:18:36Z |
Study of diffusion and quality control for CoSi2 formation by oxide-mediated cobalt silicidation with Ti capping
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Chang, JJ; Liu, CP; Hsieh, TE; Wang, YL |
| 國立交通大學 |
2014-12-08T15:17:41Z |
CoSix thermal stability on narrow-width polysilicon resistors
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Chen, YM; Tu, GC; Wang, YL; Hwang, GJ; Lo, CY |
| 國立交通大學 |
2014-12-08T15:17:21Z |
Investigation of overpotential and seed thickness on damascene copper electroplating
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Chen, KW; Wang, YL; Chang, L; Li, FY; Chang, SC |
| 國立交通大學 |
2014-12-08T15:17:21Z |
Heat, moisture and chemical resistance on low dielectric constant (low-k) film using diethoxymethylsilane (DEMS) prepared by plasma enhanced chemical vapor deposition
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Cheng, YL; Wang, YL; Lan, JK; Hwang, GJ; O'Neil, ML; Chen, CF |
| 國立交通大學 |
2014-12-08T15:17:21Z |
Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane
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Cheng, YL; Wang, YL; Hwang, GJ; O'Neill, ML; Karwacki, EJ; Liu, PT; Chen, CF |
| 國立交通大學 |
2014-12-08T15:17:21Z |
Precipitates formation and its impact on the structure of plasma-deposited fluorinated silicon oxide films
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Wu, J; Wang, YL; Kuo, CT |
| 國立交通大學 |
2014-12-08T15:17:21Z |
The study of diffusion and nucleation for COSi2 formation by oxide-mediated cobalt silicidation
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Chang, JJ; Liu, CP; Hsieh, TE; Wang, YL |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Characterization and thermal stability of fluorosilicate glass films deposited by high density plasma chemical vapor deposition with different bias power
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Hsiao, WC; Liu, CP; Wang, YL; Cheng, YL |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Mechanism for Cu void defect on various electroplated film conditions
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Feng, HP; Cheng, MY; Wang, YL; Chang, SC; Wang, YY; Wan, CC |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Effects of plasma treatment in the tungsten process for chemical vapor deposition titanium nitride barrier film beyond nanometer technology
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Chen, KW; Wang, YL; Chang, L; Li, FY; Hwang, GJ |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Uniform COSi2 nano-nucleus formation by oxide mediated silicidation with a Ti capping layer
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Chang, JJ; Hsieh, TE; Liu, CP; Wang, YL |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Oxide-mediated fort-nation of epitaxy silicide on heavily doped Si surfaces and narrow width active region
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Chen, YM; Tu, GC; Wang, YL |
| 國立交通大學 |
2014-12-08T15:17:18Z |
Width-dependent anomalous CoSix sheet resistance change by Ti and TiN capping process
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Chen, YM; Tu, GC; Wang, YL |
| 國立交通大學 |
2014-12-08T15:17:12Z |
Comparison of characteristics and integration of copper diffusion-barrier dielectrics
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Wang, TC; Cheng, YL; Wang, YL; Hsieh, TE; Hwang, GJ; Chen, CF |
| 國立交通大學 |
2014-12-08T15:17:12Z |
Novel slurry solution for dishing elimination in copper process beyond 0.1-mu m technology
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Chen, KW; Wang, YL; Liu, CP; Chang, L; Li, FY |
| 國立交通大學 |
2014-12-08T15:17:12Z |
High-selectivity damascene chemical mechanical polishing
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Chiu, SY; Wang, YL; Liu, CP; Chang, SC; Hwang, GJ; Feng, MS; Chen, CF |
| 國立交通大學 |
2014-12-08T15:02:02Z |
Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes
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Tseng, WT; Wang, YL |
顯示項目 46-70 / 126 (共6頁)
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