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教育部委托研究计画 计画执行:国立台湾大学图书馆
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"wu cy"的相关文件
显示项目 301-310 / 607 (共61页)
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| 國立交通大學 |
2014-12-08T15:06:13Z |
AN ACCURATE MOBILITY MODEL FOR THE I-V-CHARACTERISTICS OF N-CHANNEL ENHANCEMENT-MODE MOSFETS WITH SINGLE-CHANNEL BORON IMPLANTATION
|
WU, CY; DAIH, YW |
| 國立交通大學 |
2014-12-08T15:06:13Z |
A NEW THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY BURIED-CHANNEL MOSFETS
|
WU, CY; HSU, KC |
| 國立交通大學 |
2014-12-08T15:06:13Z |
MOBILITY MODELS FOR THE IV CHARACTERISTICS OF BURIED-CHANNEL MOSFETS
|
WU, CY; HSU, KC |
| 國立交通大學 |
2014-12-08T15:06:12Z |
SUPERIOR CHARACTERISTICS OF NITRIDIZED THERMAL OXIDE GROWN ON POLYCRYSTALLINE SILICON
|
CHEN, CF; WU, CY |
| 國立交通大學 |
2014-12-08T15:06:11Z |
AN EFFICIENT METHOD FOR CALCULATING THE DC TRIGGERING CURRENTS IN CMOS LATCH-UP
|
CHEN, MJ; WU, CY |
| 國立交通大學 |
2014-12-08T15:06:11Z |
A NEW ANALYTICAL 3-DIMENSIONAL MODEL FOR SUBSTRATE RESISTANCE IN CMOS LATCHUP STRUCTURES
|
CHEN, MJ; WU, CY |
| 國立交通大學 |
2014-12-08T15:06:11Z |
AN ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SHORT-CHANNEL ENHANCEMENT MODE N-CHANNEL MOSFETS WITH DOUBLE BORON CHANNEL IMPLANTATION
|
WU, CY; HUANG, GS; CHEN, HH |
| 國立交通大學 |
2014-12-08T15:06:11Z |
AN EFFICIENT TWO-DIMENSIONAL MODEL FOR CMOS LATCHUP ANALYSIS
|
CHEN, MJ; WU, CY |
| 國立交通大學 |
2014-12-08T15:06:09Z |
AN ENVIRONMENT-INSENSITIVE TRILAYER STRUCTURE FOR TITANIUM SILICIDE FORMATION
|
LIN, MZ; YU, YCS; WU, CY |
| 國立交通大學 |
2014-12-08T15:06:09Z |
A CHARACTERIZATION MODEL FOR RAMP-VOLTAGE-STRESSED IV CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE
|
CHEN, CF; WU, CY |
显示项目 301-310 / 607 (共61页)
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