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Showing items 1-21 of 21 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:28Z |
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films
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Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:51Z |
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory Devices
|
Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:57Z |
Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM
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Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:57:53Z |
High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices
|
Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:57:52Z |
Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism
|
Wu, Ming-Chi; Wu, Tsung-Han; Tseng, Tseung-Yuen |
| 東海大學 |
2018 |
都市身體改良場─前日本海軍無線電信所再利用計劃
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吳銘基; Wu,Ming-Chi |
| 中山醫學大學 |
2018 |
機器學習在磁振影像的應用研究
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吳明基; Wu, Ming-Chi |
| 中山醫學大學 |
2016-12 |
Effects of antidepressant therapy on white matter in patients with first-episode major depressive disorder
|
Lee, Chun-Te;Lai, Te-Jen;Hsieh, Ming-Hong;Wu, Ming-Chi;Chang, Cheng-Chen |
| 國立交通大學 |
2014-12-12T02:40:07Z |
以電激發砷化鎵塊材為兆赫波增益介質之研究
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吳明錡; Wu, Ming-Chi; 顏順通; Yen, Shun-Tung |
| 國立交通大學 |
2014-12-12T01:27:27Z |
氧化鋯電阻式記憶元件搭配場效電晶體之特性研究
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吳明錡; Wu, Ming Chi; 曾俊元; Tseng, Tseung Yuen |
| 國立交通大學 |
2014-12-08T15:48:37Z |
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films
|
Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:29:05Z |
Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer
|
Wu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:28:51Z |
Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM
|
Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:40Z |
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
|
Wu, Ming-Chi; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:21:34Z |
Robust unipolar resistive switching of Co nano-dots embedded ZrO(2) thin film memories and their switching mechanism
|
Wu, Ming-Chi; Wu, Tsung-Han; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:18:12Z |
Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film
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Lin, Meng-Han; Wu, Ming-Chi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:11:49Z |
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:51Z |
Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
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Lin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:06:33Z |
High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立東華大學 |
2009 |
Nonpolar bistable resistive switchng behaviors of bismuth titanate oxide thin film
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林群傑; Lin, Chun-Chieh; Lin, Meng-Han ; Wu, Ming-Chi ;Tseng, Tseung-Yuen |
| 國立臺灣大學 |
2006 |
Development of a Multiplexed Interface for Capillary Electrophoresis?Electrospray Ion Trap Mass Spectrometry
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Li, Fu-An; Wu, Ming-Chi; Her, Guor-Rong |
Showing items 1-21 of 21 (1 Page(s) Totally)
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