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机构 日期 题名 作者
國立交通大學 2014-12-08T15:04:48Z CHARACTERIZATION OF ULTRATHIN OXIDE PREPARED BY LOW-TEMPERATURE WAFER LOADING AND NITROGEN PREANNEALING BEFORE OXIDATION WU, SL; LEE, CL; LEI, TF; LIANG, MS
國立交通大學 2014-12-08T15:04:37Z ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESS WU, SL; LIN, TY; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:04:29Z ULTRATHIN TEXTURED POLYCRYSTALLINE OXIDE WITH A HIGH ELECTRON CONDUCTION EFFICIENCY PREPARED BY THERMAL-OXIDATION OF THIN POLYCRYSTALLINE SILICON FILM ON N+ POLYCRYSTALLINE SILICON WU, SL; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:04:26Z ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE WU, SL; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:04:25Z TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS) WU, SL; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:04:19Z CHARACTERISTICS OF POLYSILICON CONTACTED SHALLOW JUNCTION DIODE FORMED WITH A STACKED-AMORPHOUS-SILICON FILM WU, SL; LEE, CL; LEI, TF; CHANG, HC
國立交通大學 2014-12-08T15:04:16Z THIN OXIDE GROWN ON HEAVILY CHANNEL-IMPLANTED SUBSTRATE BY USING A LOW-TEMPERATURE WAFER LOADING AND N2 PRE-ANNEALING PROCESS WU, SL; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:04:04Z ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION WU, SL; LEE, CL; LEI, TF; CHEN, CF; CHEN, LJ; HO, KZ; LING, YC
國立交通大學 2014-12-08T15:04:01Z SUPPRESSION OF THE BORON PENETRATION INDUCED SI/SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFET WU, SL; LEE, CL; LEI, TF; CHEN, JF; CHEN, LJ
國立交通大學 2014-12-08T15:03:54Z SYNTHESIS AND X-RAY-DIFFRACTION OF FERROELECTRIC LIQUID-CRYSTALLINE POLYSILOXANES CONTAINING 4'-(2-CHLORO-3-METHYL-PENTANOYLOXY)-4-ALKANYLOXYBIPHENYL SIDE-GROUPS HSIUE, GH; HSIEH, PJ; WU, SL; HSU, CS

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