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Showing items 1-21 of 21 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:44:44Z |
Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition
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Chen, YC; Wu, YCS; Tung, IC; Chao, CW; Feng, MS; Chen, HC |
| 國立交通大學 |
2014-12-08T15:42:48Z |
High-temperature healing of interfacial voids in GaAs wafer bonding
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Wu, YCS; Liu, PC; Feigelson, RS; Route, RK |
| 國立交通大學 |
2014-12-08T15:42:03Z |
Healing kinetics of interfacial voids in GaAs wafer bonding
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Wu, YCS; Hu, GZ |
| 國立交通大學 |
2014-12-08T15:41:48Z |
Electroless plating with Pd induced crystallization of amorphous silicon thin films
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Hu, GR; Wu, YCS; Chao, CW; Huang, TJ |
| 國立交通大學 |
2014-12-08T15:41:08Z |
Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si
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Chao, CW; Wu, YCS; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:40:51Z |
The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films
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Lin, PY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:40:24Z |
Selective growth of carbon nanotubes on prepatterned amorphous silicon thin films by electroless plating Ni
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Chao, CW; Wu, YCS; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:40:21Z |
Wafer bonding by Ni-induced crystallization of amorphous silicon
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Chao, CP; Wu, YCS; Lee, TL; Wang, YH |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Synthesis of microcrystalline silicon at room temperature using ICP
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Wu, JH; Shieh, JM; Dai, BT; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:37:17Z |
Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers
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Liu, PC; Lu, CL; Wu, YCS; Cheng, JH; Ouyang, H |
| 國立交通大學 |
2014-12-08T15:37:06Z |
Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures
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Liu, PC; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Low temperature polycrystalline silicon thin film transistors fabricated by electroless plating Ni induced crystallization of amorphous Si
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Chao, CW; Wu, YCS; Chen, YC; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:17Z |
The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon
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Lin, YD; Wu, YCS; Chao, CW; Hu, GR |
| 國立交通大學 |
2014-12-08T15:26:17Z |
The effects of Pd2Si on the electroless plating Pd induced crystallization of amorphous silicon thin films
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Huang, CTJ; Hu, GR; Wu, YCS; Chao, CW |
| 國立交通大學 |
2014-12-08T15:26:16Z |
Wafer bonding using indium tin oxide intermediate layer for high brightness LEDs
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Liu, PC; Hou, CY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:19:18Z |
Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers
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Liu, PC; Hou, CY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:18:15Z |
Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon
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Hou, CY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:18:15Z |
Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes
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Hsu, CY; Lan, WH; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:17:51Z |
The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs
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Hsu, CY; Lan, WH; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:17:35Z |
A simple method for gettering of nickel within the Ni-metal-induced lateral crystallization polycrystalline silicon film
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Hou, CY; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:17:05Z |
Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers
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Hao, OY; Wu, YCS; Chiou, HH; Liu, CC; Cheng, JH; Wen, OY; Chiou, SH; Shiue, ST; Chueh, YL; Chou, LJ |
Showing items 1-21 of 21 (1 Page(s) Totally)
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