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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
國立交通大學 2019-08-02T02:15:26Z The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories Chiu, Yung-Yueh; Lin, Cheng-Han; Yang, Jhih-Siang; Yang, Bo-Jun; Aoki, Minoru; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro
國立交通大學 2019-04-02T05:58:58Z Transconductance Distribution in Program/Erase Cycling of NAND Flash Memory Devices: a Statistical Investigation Chiu, Yung-Yueh; Lin, I-Chun; Chang, Kai-Chieh; Yang, Bo-Jun; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro
國立交通大學 2018-08-21T05:53:13Z Evaluation of the Role of Deep Trap State Using Analytical Model in the Program/Erase Cycling of NAND Flash Memory and Its Process Dependence Yang, Bo-Jun; Wu, Yu-Ting; Chiu, Yung-Yueh; Kuo, Tse-Mien; Chang, Jung-Ho; Wang, Pin-Yao; Shirota, Riichiro
國立成功大學 2017-08-17 使用毫米波之超高密度裝置間通訊網路中節能排程及時槽共享演算法 楊博竣; Yang, Bo-Jun
國立交通大學 2015-12-02T02:59:29Z Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layer Chiu, Yung-Yueh; Yang, Bo-Jun; Li, Fu-Hai; Chang, Ru-Wei; Sun, Wein-Town; Lo, Chun-Yuan; Hsu, Chia-Jung; Kuo, Chao-Wei; Shirota, Riichiro
國立交通大學 2015-07-21T08:29:05Z New Method to Analyze the Shift of Floating Gate Charge and Generated Tunnel Oxide Trapped Charge Profile in NAND Flash Memory by Program/Erase Endurance Shirota, Riichiro; Yang, Bo-Jun; Chiu, Yung-Yueh; Chen, Hsuan-Tse; Ng, Seng-Fei; Wang, Pin-Yao; Chang, Jung-Ho; Kurachi, Ikuo
國立交通大學 2014-12-08T15:31:35Z Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

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