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Institution Date Title Author
國立交通大學 2019-08-02T02:15:26Z The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories Chiu, Yung-Yueh; Lin, Cheng-Han; Yang, Jhih-Siang; Yang, Bo-Jun; Aoki, Minoru; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro
國立交通大學 2018-01-24T07:41:36Z 探討快閃記憶體元件製程中氫氣濃度對可靠度特性影響分析之研究 楊智翔; 白田理一郎; Yang,Jhih-Siang; Riichiro Shirota

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