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| 東海大學 |
2007 |
Temperature effect of metal-oxide-semiconductor field-effect-transistors' gate current evaluated with the mask dimensions
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Yeh, C.-C., Neih, C.-F., Chen, Y.-Y., Gong, J. |
| 東海大學 |
2007 |
Simple and accurate method of modeling gate current of N-channel metal-oxide-semiconductor field-effect transistor
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Yeh, C.-C., Neih, C.-F., Chen, Y.-Y., Gong, J. |
| 東海大學 |
2006-10-23 |
Modeling the MOSFETs' gate current with the drawn dimensions
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Yeh, C.-C., Neih, C.-F., Chen, Y.-Y., Gong, J. |
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