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Showing items 21-30 of 66  (7 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:02:31Z Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor Chang, KM; Yeh, TH; Wang, SW; Li, CH; Yang, JY
國立交通大學 2014-12-08T15:02:25Z Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor Chang, KM; Wang, SW; Wu, CJ; Yeh, TH; Li, CH; Yang, JY
國立交通大學 2014-12-08T15:02:24Z Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low-pressure chemical-vapor-deposition reactor Chang, KM; Yeh, TH; Wang, SW; Li, CH
國立交通大學 2014-12-08T15:02:22Z Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasma Chang, KM; Yeh, TH; Deng, IC; Lin, HC
國立交通大學 2014-12-08T15:02:13Z Comprehensive study of plasma pretreatment process for thin gate oxide (<10 nm) fabricated by electron cyclotron resonance plasma oxidation Chang, KM; Li, CH; Fahn, FJ; Yeh, TH; Wang, SW
國立交通大學 2014-12-08T15:02:13Z Reduction of selectivity loss probability on dielectric surface during chemical vapor deposition of tungsten using fluorinated oxide and removing silanol units on dielectric surface Chang, KM; Wang, SW; Li, CH; Tsai, JY; Yeh, TH
國立交通大學 2014-12-08T15:02:10Z Characteristics of selective chemical vapor deposition of tungsten on aluminum with a vapor phase precleaning technology Chang, KM; Yeh, TH; Wang, SW; Li, CH
國立交通大學 2014-12-08T15:02:10Z The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidation Chang, KM; Li, CH; Fahn, FJ; Tsai, JY; Yeh, TH; Wang, SW; Yang, JY
國立交通大學 2014-12-08T15:01:59Z SiH4-WF6 gas-phase nucleated tungsten as an adhesion layer in blanket chemical vapor deposition for ultralarge scale integration Chang, KM; Yeh, TH; Wang, SW; Li, CH
國立交通大學 2014-12-08T15:01:54Z Suppression of fluorine impurity in blanket chemical vapor deposited tungsten film for via fills with a novel two-step deposition technique Chang, KM; Yeh, TH; Lain, KD; Fu, CM

Showing items 21-30 of 66  (7 Page(s) Totally)
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