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教育部委托研究计画 计画执行:国立台湾大学图书馆
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"yeh th"的相关文件
显示项目 21-30 / 66 (共7页)
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| 國立交通大學 |
2014-12-08T15:02:31Z |
Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor
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Chang, KM; Yeh, TH; Wang, SW; Li, CH; Yang, JY |
| 國立交通大學 |
2014-12-08T15:02:25Z |
Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor
|
Chang, KM; Wang, SW; Wu, CJ; Yeh, TH; Li, CH; Yang, JY |
| 國立交通大學 |
2014-12-08T15:02:24Z |
Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low-pressure chemical-vapor-deposition reactor
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Chang, KM; Yeh, TH; Wang, SW; Li, CH |
| 國立交通大學 |
2014-12-08T15:02:22Z |
Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasma
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Chang, KM; Yeh, TH; Deng, IC; Lin, HC |
| 國立交通大學 |
2014-12-08T15:02:13Z |
Comprehensive study of plasma pretreatment process for thin gate oxide (<10 nm) fabricated by electron cyclotron resonance plasma oxidation
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Chang, KM; Li, CH; Fahn, FJ; Yeh, TH; Wang, SW |
| 國立交通大學 |
2014-12-08T15:02:13Z |
Reduction of selectivity loss probability on dielectric surface during chemical vapor deposition of tungsten using fluorinated oxide and removing silanol units on dielectric surface
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Chang, KM; Wang, SW; Li, CH; Tsai, JY; Yeh, TH |
| 國立交通大學 |
2014-12-08T15:02:10Z |
Characteristics of selective chemical vapor deposition of tungsten on aluminum with a vapor phase precleaning technology
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Chang, KM; Yeh, TH; Wang, SW; Li, CH |
| 國立交通大學 |
2014-12-08T15:02:10Z |
The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidation
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Chang, KM; Li, CH; Fahn, FJ; Tsai, JY; Yeh, TH; Wang, SW; Yang, JY |
| 國立交通大學 |
2014-12-08T15:01:59Z |
SiH4-WF6 gas-phase nucleated tungsten as an adhesion layer in blanket chemical vapor deposition for ultralarge scale integration
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Chang, KM; Yeh, TH; Wang, SW; Li, CH |
| 國立交通大學 |
2014-12-08T15:01:54Z |
Suppression of fluorine impurity in blanket chemical vapor deposited tungsten film for via fills with a novel two-step deposition technique
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Chang, KM; Yeh, TH; Lain, KD; Fu, CM |
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