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Showing items 1-8 of 8 (1 Page(s) Totally) 1 View [10|25|50] records per page
臺大學術典藏 |
2020-01-06T03:11:56Z |
Intermittent pressurized operation of steam explosion pretreatment system
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Liao, Y.-C.; Yen, F.-Y.; Hung, F.; Su, C.-H.; Chen, W.-H.; YING-CHIH LIAO |
國立交通大學 |
2014-12-08T15:15:52Z |
HfSiON n-MOSFETs using low-work function HfSi chi gate
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
國立交通大學 |
2014-12-08T15:14:46Z |
High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs
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Hung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, Shih C.; Liang, Mong-Song |
國立交通大學 |
2014-12-08T15:14:22Z |
High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
國立成功大學 |
2007-04 |
High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
國立成功大學 |
2007-02 |
High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs
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Hung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, Shih C.; Liang, Mong-Song |
國立成功大學 |
2006-09 |
HfSiON n-MOSFETs using low-work function HfSi chi gate
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
國立成功大學 |
2006-06 |
HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
Showing items 1-8 of 8 (1 Page(s) Totally) 1 View [10|25|50] records per page
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