臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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显示项目 2234516-2234525 / 2346973 (共234698页)
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机构	日期	题名	作者
臺大學術典藏	2021-09-02T00:03:55Z	High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness	Huang Y.-S;Tsou Y.-J;Huang C.-H;Huang C.-H;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al.
臺大學術典藏	2021-09-02T00:03:55Z	Indication of band flattening at the Fermi level in a strongly correlated electron system	Melnikov M.Y;Shashkin A.A;Dolgopolov V.T;Huang S.-H;Liu C.W;Kravchenko S.V.; Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:55Z	Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack	Huang C.-H;Huang Y.-S;Chang D.-Z;Lin T.-Y;Liu C.W.; Huang C.-H; Huang Y.-S; Chang D.-Z; Lin T.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:56Z	Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry	Chung C.-C;Lin H.-C;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Chung C.-C; Lin H.-C; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:57Z	Metallic state in a strongly interacting spinless two-valley electron system in two dimensions	Melnikov M.Y;Shashkin A.A;Dolgopolov V.T;Huang S.-H;Liu C.W;Zhu A.Y.X;Kravchenko S.V.; Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Zhu A.Y.X; Kravchenko S.V.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:57Z	Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers	Yen C.-C;Tai A.-H;Liu Y.-C;Yeh C.-H;Liu C.W.; Yen C.-C; Tai A.-H; Liu Y.-C; Yeh C.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:57Z	Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence	Ye H.-Y;Chung C.-C;Liu C.W.; Ye H.-Y; Chung C.-C; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:57Z	Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence	Ye H.-Y;Chung C.-C;Wong I.-H;Lan H.-S;Liu C.W.; Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:58Z	Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers with Quantum Well Structures	Tai A.-H;Yen C.-C;Chen T.-L;Chou C.-H;Liu C.W.; Tai A.-H; Yen C.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:58Z	Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels	Liu Y.-C;Huang Y.-S;Lu F.-L;Ye H.-Y;Tu C.-T;Liu C.W.; Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU

显示项目 2234516-2234525 / 2346973 (共234698页)
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