臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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机构	日期	题名	作者
臺大學術典藏	2021-09-02T00:03:59Z	Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs	Huang Y.-S;Huang C.-H;Lu F.-L;Lin C.-Y;Ye H.-Y;Wong I.-H;Jan S.-R;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al.
臺大學術典藏	2021-09-02T00:03:59Z	Process simulation of pulsed laser annealing on epitaxial Ge on Si	Lu C.-T;Lu F.-L;Tsai C.-E;Huang W.-H;Liu C.W.; Lu C.-T; Lu F.-L; Tsai C.-E; Huang W.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:00Z	Record Low Contact Resistivity to Ge:B (8.110-10Omega-cm-2) and GeSn:B (4.110-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping	Lu F.-L;Liu Y.-C;Tsai C.-E;Ye H.-Y;Liu C.W.; Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:00Z	Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs	Chung C.-C;Ye H.-Y;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Chung C.-C; Ye H.-Y; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:00Z	Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys	Lan H.-S;Chang S.T;Liu C.W.; Lan H.-S; Chang S.T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:00Z	Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure	Liu X;Lu T.-M;Harris C.T;Lu F.-L;Liu C.-Y;Li J.-Y;Liu C.W;Du R.-R.; Liu X; Lu T.-M; Harris C.T; Lu F.-L; Liu C.-Y; Li J.-Y; Liu C.W; Du R.-R.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:01Z	Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch	Tu C.-T;Huang Y.-S;Cheng C.-Y;Tsai C.-E;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:01Z	Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells	Melnikov M.Y;Dolgopolov V.T;Shashkin A.A;Huang S.-H;Liu C.W;Kravchenko S.V.; Melnikov M.Y; Dolgopolov V.T; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:01Z	Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system	Dolgopolov V.T;Melnikov M.Y;Shashkin A.A;Huang S.-H;Liu C.W;Kravchenko S.V.; Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:01Z	Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process	Huang Y.-S;Lu F.-L;Tsou Y.-J;Ye H.-Y;Lin S.-Y;Huang W.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU

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