臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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機構	日期	題名	作者
臺大學術典藏	2021-09-02T00:03:50Z	Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well	Lin C.-Y;Ye H.-Y;Lu F.-L;Lan H.S;Liu C.W.; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:50Z	Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs	Lee M.H;Lin Y.-Y;Yang Y.-J;Hsieh F.-C;Chang S.T;Liao M.-H;Li K.-S;Liu C.W;Chen K.-T;Liao C.-Y;Siang G.-Y;Lo C;Chen H.-Y;Tseng Y.-J;Chueh C.-Y;Chang C.; Lee M.H; CHEE-WEE LIU et al.
臺大學術典藏	2021-09-02T00:03:50Z	Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition	Tsai C.-E;Lu F.-L;Chen P.-S;Liu C.W.; Tsai C.-E; Lu F.-L; Chen P.-S; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Comprehensive thermal SPICE modeling of FinFETs and BEOL with layout flexibility considering frequency dependent thermal time constant, 3D heat flows, boundary/alloy scattering, and interfacial thermal resistance with circuit level reliability evaluation	Yan J.-Y;Chung C.-C;Jan S.-R;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Yan J.-Y; Chung C.-C; Jan S.-R; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system	Lu T.M;Tracy L.A;Laroche D;Huang S.-H;Chuang Y;Su Y.-H;Li J.-Y;Liu C.W.; Lu T.M; Tracy L.A; Laroche D; Huang S.-H; Chuang Y; Su Y.-H; Li J.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors	Liu H.-H;Huang Y.-S;Lu F.-L;Ye H.-Y;Liu C.W.; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications	Lu F.-L;Tsai C.-E;Wong I.-H;Lu C.-T;Liu C.W.; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Double-layer amorphous InGaZnO thin film transistors with high mobility and high reliability	Li S.-L;Lee M.-X;Yen C.-C;Chen T.-L;Chou C.-H;Liu C.W.; Li S.-L; Lee M.-X; Yen C.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:52Z	Energy preference of uniform polarization switching for HfO2 by first-principle study	Chen Y.-W;Fan S.-T;Liu C.W.; Chen Y.-W; Fan S.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:52Z	Ferroelectric Al:HfO2 negative capacitance FETs	Lee M.H;Chen P.-G;Fan S.-T;Chou Y.-C;Kuo C.-Y;Tang C.-H;Chen H.-H;Gu S.-S;Hong R.-C;Wang Z.-Y;Chen S.-Y;Liao C.-Y;Chen K.-T;Chang S.T;Liao M.-H;Li K.-S;Liu C.W.; Lee M.H; CHEE-WEE LIU et al.

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