| 國立交通大學 |
2014-12-08T15:36:34Z |
Electrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows
|
Lee, Yih-Shing; Yen, Tung-Wei; Lin, Cheng-I; Lin, Horng-Chih; Yeh, Yun |
| 國立交通大學 |
2019-04-02T06:00:46Z |
Electrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows
|
Lee, Yih-Shing; Yen, Tung-Wei; Lin, Cheng-I; Lin, Horng-Chih; Yeh, Yun |
| 國立交通大學 |
2014-12-08T15:07:33Z |
Electrical characteristics of an organic bistable device using an Al/Alq(3)/nanostructured MoO(3)/Alq(3)/p(+)-Si structure
|
Chang, Tzu-Yueh; Cheng, You-Wei; Lee, Po-Tsung |
| 國立交通大學 |
2019-04-02T05:58:55Z |
Electrical characteristics of an organic bistable device using an Al/Alq(3)/nanostructured MoO3/Alq(3)/p(+)-Si structure
|
Chang, Tzu-Yueh; Cheng, You-Wei; Lee, Po-Tsung |
| 東方設計學院 |
2008-08 |
Electrical Characteristics of Bi1Ti3O12 Ferroelectric Thin Films Annealed under Different Temperature for Applications in Nonvolatile Memory Devices
|
陳開煌; Chen, Kai-Huang; Diao, Chien-Chen; Yang, Cheng-Fu; Wang, Bing-Xun; (東方技術學院電子與資訊系) |
| 東方設計學院 |
2009 |
Electrical Characteristics of Bi4Ti3O12 Ferroelectric Thin Films Annealed under Different Temperature for Applications in Nonvolatile Memory Devices
|
Chen, Kai-Huang; Diao, Chien-Chen; Yang, Cheng-Fu; Wang, Bing-Xun; 陳開煌; (東方技術學院電子與資訊系) |
| 國立交通大學 |
2014-12-08T15:49:20Z |
Electrical characteristics of CO2-sensitive diode based on WO3 and IrO2 for microsensor applications
|
Chao, SC |
| 國立交通大學 |
2014-12-08T15:05:16Z |
ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONS
|
WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG |
| 國立彰化師範大學 |
1991-04 |
Electrical Characteristics of Double-barrier Resonant Tunneling Structures with Different Electrode Doping Concentrations
|
Wu, Jenq-Shinn; Chang, C. Y. ; Lee, C. P. ; Chang, K. H. ; Liu, D. G. |
| 國立交通大學 |
2017-04-21T06:48:37Z |
Electrical Characteristics of Flexible Organic Thin-film Transistors under Bending Conditions
|
Chen, Fang-Chung; Chen, Tzung-Da |
| 國立中山大學 |
2007-05 |
Electrical characteristics of fluorine passivated MOCVD-TiO2 film on (NH4)2Sx treated GaAs
|
M.K. Lee;C.F. Yen;T.H. Shih;C.L. Ho;H.C. Lee;H.F. Tu;C.H. Fan |
| 國立交通大學 |
2014-12-08T15:40:11Z |
Electrical characteristics of glucose-sensitive diode arrays based on WO3 and IrO2 for microsensor applications
|
Chao, SC |
| 國立成功大學 |
1998-05 |
Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
|
Lin, Y. S.; Shieh, H. M.; Hsu, Wei-Chou; Su, J. S.; Huang, J. Z.; Wu, Y. H.; Ho, S. D.; Lin, W. |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure
|
Funamiz, K.; Lin, Y. C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Chang, E. Y.; Hattori, T.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Electrical Characteristics of High Performance SPC and MILC p-Channel LTPS-TFT with High-kappa Gate Dielectric
|
Ma, Ming-Wen; Chiang, Tsung-Yu; Yeh, Chi-Ruei; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:45:06Z |
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom
|
Wu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM |
| 國立聯合大學 |
2004 |
Electrical characteristics of high-k HfO2 gate dielectrics prepared by oxidation in HNO3 followed by rapid thermal annealing in N2
|
胡振國, C.H. Chang, L.S. Lee, M.J. Tsai and J.G. Hwu |
| 國立交通大學 |
2019-04-03T06:38:47Z |
Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets
|
Tiwari, Nidhi; Chauhan, Ram Narayan; Liu, Po-Tsun; Shieh, Han-Ping D. |
| 國立中山大學 |
2006 |
Electrical Characteristics of Liquid Phase Deposited TiO2 Films on GaAs Substrate with (NH4)2Sx treatment
|
Ming-Kwei Lee; Chih-Feng Yen; Jung-Jie Huang |
| 國立中山大學 |
2007 |
Electrical Characteristics of Liquid-Phase-Deposited Titanium Oxide Films on (NH4)2Sx-Treated InP Substrate
|
Ming-Kwei Lee; Jung-Jie Huang; Chih-Feng Yen |
| 國立交通大學 |
2014-12-08T15:40:32Z |
Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric
|
Chang, KM; Yang, WC; Tsai, CP |
| 國立中山大學 |
2005-11 |
Electrical Characteristics of LPD TiO2 Films on GaAs Substrate with (NH4)2Sx treatment
|
Ming-Kwei Lee;Chih-Feng Yen;Jung-Jie Huang |
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
|
Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:24:03Z |
Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:36:18Z |
Electrical characteristics of Ni Ohmic contact on n-type GeSn
|
Li, H.; Cheng, H. H.; Lee, L. C.; Lee, C. P.; Su, L. H.; Suen, Y. W. |
