| 義守大學 |
2002-05 |
Electrical properties of Al2O3- and MnO2-doped thick film resistors on AlN substrates
|
Lih-Shan Chen;Shen-Li Fu;Jun-Hong Wu |
| 國立交通大學 |
2014-12-08T15:02:40Z |
Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures
|
Tai, YH; Su, FC; Chang, WS; Feng, MS; Cheng, HC |
| 國立成功大學 |
2014-04 |
Electrical Properties of Amorphous Zinc-Indium-Tin Oxide Semiconductor Thin-Film Transistors
|
Li, Chih-Wei; Chang, Sheng-Po; Chang, Shoou-Jinn |
| 臺大學術典藏 |
2022-08-09T03:50:38Z |
Electrical properties of annealed MPCVD grown vertically aligned carbon nanotube films
|
Huang B.R.; Huang C.S.; Wu C.C.; Chen L.-C.L.; Chen K.H.; Huang B.R.; Huang C.S.; Wu C.C.; Chen L.-C.L.; Chen K.H.; LI-CHYONG CHEN |
| 國立中山大學 |
1996-09 |
Electrical properties of Antimonide-Arsenide quantum wells
|
Ikai Lo |
| 南台科技大學 |
2007 |
Electrical Properties of Bilayer SrBi2Ta2O9/Ba(Zr0.1Ti0.9)O3 Thin Films Deposited by RF-Magnetron Sputtering
|
鄒文正; Wen-Cheng Tzou; K.H.Chen; C.F.Yang; C.C.Li |
| 國立成功大學 |
2018-08 |
Electrical properties of CdS/Cu(In,Ga)Se-2 interface
|
Li;Jian, V.;Mansfield;Lorelle, M.;Egaas;Brian;Ramanathan;Kannan |
| 國立成功大學 |
2018 |
Electrical properties of CdS/Cu(In,Ga)Se2 interface
|
Li, J.V.;Mansfield, L.M.;Egaas, B.;Ramanathan, K. |
| 國立交通大學 |
2019-04-02T06:04:28Z |
Electrical Properties of Compound 2D Semiconductor Mo1-xNbxS2
|
Lu, Peng; Ho, Yen Teng; Chu, Yung-Ching; Zhang, Ming; Chien, Po-Yen; Luong, Tien-Tung; Chang, Edward Yi; Woo, Jason C. S. |
| 國立成功大學 |
2009-03-20 |
Electrical properties of copper and titanium-codoped zinc ferrites
|
Hsiang, Hsing-I; Liu, Yi-Lang |
| 國立交通大學 |
2014-12-08T15:03:01Z |
Electrical properties of diamond films grown at low temperature
|
Chen, CF; Chen, SH; Lin, KM |
| 國立交通大學 |
2014-12-08T15:44:14Z |
Electrical properties of diamond-like carbon films deposited using a filtered cathodic arc system
|
Li, YW; Chen, CF; Tseng, YJ |
| 國立臺灣科技大學 |
2002 |
Electrical Properties of Ferroelectric PbSrTiO3 Films on Stainless Steel Substrates With LaSrMnO3 Buffer Layers
|
Han-Chang Pan;Jiun-Nan Sheng;Chen-Chia Chou;Hsiu-Fung Cheng |
| 國立中山大學 |
2004 |
Electrical Properties of Fluorine-Doped Oxynitride Films Prepared by Photoillumination Liquid-Phase Deposition
|
M.K. Lee; C.M. Shih; S.Y. Lin; C.D. Yang; T.H. Shih |
| 國立成功大學 |
2006-11 |
Electrical properties of fluorine-doped silicon-oxycarbide dielectric barrier for copper interconnect
|
Huang, Chun-Chieh; Huang, Jow-Lay; Wang, Ying-Lang; Chang, Juin-Jie |
| 國立成功大學 |
2003-02-28 |
Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method
|
Chou, Dei-Wei; Wang, Hwei-Heng; Wang, Yeong-Her; Houng, Mau-Phon |
| 國立交通大學 |
2014-12-08T15:38:42Z |
Electrical properties of GaSe doped with Er
|
Hsu, YK; Chang, CS; Huang, WC |
| 國立臺灣大學 |
1990 |
Electrical Properties of Glass Microelectrodes with Different Tip Diameters
|
Shaw, F. Z.; Tsao, H. W.; 嚴震東; Shaw, F. Z.; Tsao, H. W.; Yen, Chen-Tung |
| 中國文化大學 |
2016-05 |
Electrical Properties of HeLa Cells Based on Scalable 3D Interdigital Electrode Array
|
Chang, FY (Chang, Fu-Yu); Chen, MK (Chen, Ming-Kun); Wang, MH (Wang, Min-Haw); Jang, LS (Jang, Ling-Sheng) |
| 國立成功大學 |
2016-05 |
Electrical Properties of HeLa Cells Based on Scalable 3D Interdigital Electrode Array
|
Chang, Fu-Yu; Chen, Ming-Kun; Wang, Min-Haw; Jang, Ling-Sheng |
| 國立交通大學 |
2014-12-08T15:12:38Z |
Electrical properties of high-kappa praseodymium oxide polycrystalline silicon thin-film transistors with nitrogen implantation
|
Deng, Chih-Kang; Chang, Hong-Ren; Chiou, Bi-Shiou |
| 東海大學 |
1992 |
Electrical properties of high-temperature annealed boron-implanted Hg0.7Cd0.3Te
|
Lam, Kai-Yuen, Gong, Jeng, Wu, Tai-Bon, Lou, Jen-Chung |
| 國立成功大學 |
2018-11 |
Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors
|
Cheng;Tien-Hung;Chang;Sheng-Po;Chang;Shoou-Jinn |
| 國立高雄師範大學 |
2008 |
Electrical properties of InP/InGaAs pnp heterostructure-emitter bipolar transistor
|
Jung-Hui Tsai;Wen-Chau Liu;Der-Feng Guo;Yu-Chi Kang;Shao-Yen Chiu;Wen-Shiung Lour; 蔡榮輝 |
| 中國文化大學 |
2017-11 |
Electrical properties of La0.85Sr0.15Ga0.8Mg0.2O3-delta samples prepared by one- or three-stage solid-state calcination process
|
Wu, YC (Wu, Yu-Chuan); Chen, SW (Chen, Shau-Wei) |
| 中國文化大學 |
2012 |
Electrical Properties of Lanthanum Strontium Titanates Modified by Microwave Sintering
|
Wang, YM (Wang, Yao-Ming); Lei, CM (Lei, Chien-Ming); Chang, HY (Chang, Horng-Yi) |
| 國立臺灣海洋大學 |
2012-12 |
Electrical Properties of Lanthanum Strontium Titanates Modified by Microwave Sintering
|
Yao-Ming Wang; Chien-Ming Lei; Horng-Yi Chang |
| 義守大學 |
1998-08 |
Electrical Properties of Laser Trimmed Resistors Printed on LTCC Substrates
|
許志雄;Hsi, Chi-shiung;傅勝利;Fu, Shen-li;尹瑞堂;Yin, Jui-tang |
| 國立成功大學 |
2010-01 |
Electrical properties of Li-doped NiO films
|
Jang, Wei-Luen; Lu, Yang-Ming; Hwang, Weng-Sing; Chen, Wei-Chien |
| 國立中山大學 |
2008 |
Electrical Properties of Liquid Phase Deposited SiO2 on Photochemical Treated GaN
|
Ming-Kwei Lee ;Chen-Lin Ho; Jia-Yi Zeng |
| 國立聯合大學 |
2010 |
Electrical properties of low temperature sintered copper and titanium-codoped copper zinc ferrites
|
Hsiang HI , Mei LT , Hsi CS , Liu YL , Yen FS |
| 國立交通大學 |
2014-12-08T15:12:20Z |
Electrical properties of low-temperature-compatible p-channel polycrystalline-silicon TFTs using high-kappa gate dielectrics
|
Yang, Ming-Jui; Chien, Chao-Hsin; Lu, Yi-Hsien; Shen, Chih-Yen; Huang, Tiao-Yuan |
| 國立成功大學 |
2009-07 |
Electrical properties of low-temperature-fired ferrite-dielectric composites
|
Hsiang, Hsing-I; Chen, Tai-How |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
|
Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:10:33Z |
Electrical Properties of Metal-Silicon Nitride-Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy
|
Hsieh, Ming-Ta; Chen, Jenn-Fang; Yen, Kuo-Hsi; Zan, Hsiao-Wen; Chang, Chan-Ching; Chen, Chih-Hsien; Shih, Ching-Chieh; Lee, Yeong-Shyang |
| 國立交通大學 |
2014-12-08T15:43:37Z |
Electrical properties of Mg/La, Mg/Nb co-doped (Ba0.7Sr0.3)TiO3 thin films prepared by metallo-organic deposition method
|
Chen, SY; Wang, HW; Huang, LC |
| 中原大學 |
2001-08 |
Electrical Properties of Mg/La, Mg/Nb Co-Doped (Ba0.7Sr0.3)TiO3 Thin Films Prepared by Metallo-Organic Deposition Method
|
San-Yuan Chen;Hong-Wen Wang;Li-Chi Huang |
| 國立臺灣海洋大學 |
1996-02 |
Electrical Properties of Microwave Sintered (Sr 0.4 Pb 0.6 )TiO 3 Ceramics
|
Horng-Yi Chang;Kuo-Shung Liu;Chen-Ti Hu;I-Nan Lin |
| 臺大學術典藏 |
2018-09-10T08:35:25Z |
Electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures
|
Chin, H-A;Cheng, I-C;Li, C-K;Wu, Y-R;Chen, J. Z.;Lu, W-S;Lee, W-L; Chin, H-A; Cheng, I-C; Li, C-K; Wu, Y-R; Chen, J. Z.; Lu, W-S; Lee, W-L; I-CHUN CHENG; JIAN-ZHANG CHEN; YUH-RENN WU |
| 國立交通大學 |
2014-12-08T15:46:22Z |
Electrical properties of multiple high-dose Si implantation in p-GaN
|
Lai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH; Chang, CY |
| 國立彰化師範大學 |
2005-01 |
Electrical Properties of Ni/Au and Au Contacts on p-type GaN
|
Lin, Yow-Jon |
| 國立交通大學 |
2014-12-08T15:01:10Z |
Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
|
Tsai, MS; Sun, SC; Tseng, TY |
| 國立交通大學 |
2019-04-02T05:59:33Z |
Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
|
Tsai, MS; Sun, SC; Tseng, TY |
| 東方設計學院 |
2009-09-01 |
Electrical properties of p-ZnO/n-Si heterjunction formed by RF magnetron sputter
|
Wu, Sean; Lee, Maw-Shung; Jhong, Shih-Bin; Liu, Kuan-Ting; Chang, Yee-Shin; Hsiao, Yu-Jen; 吳信賢; (東方技術學院電子與資訊系) |
| 中國文化大學 |
2007 |
Electrical properties of pressure quenched silicon by thermal spraying
|
Tan, S. Y.; Gambino, R. J.; Sampath, S.; Herman, H. |
| 國立彰化師範大學 |
2004-03 |
Electrical Properties of Pt Contacts on p-GaN Activated in Air
|
Lin, Yow-Jon; Wu, Kuo-Chen |
| 國立交通大學 |
2014-12-08T15:46:52Z |
Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films
|
Lee, CJ; Huang, LT; Ezhilvalavan, S; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:17:04Z |
Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes
|
Liu, CY; Wang, A; Jang, WY; Tseng, TY |
| 國立臺灣科技大學 |
2017 |
Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10−9 A and a high rectification ratio above 105
|
Tuan, Tuan T.T.A;Kuo, D.-H;Saragih, A.D;Li, G.-Z. |
| 國立交通大學 |
2014-12-08T15:43:51Z |
Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy
|
Huang, HJ; Chen, KM; Chang, CY; Chao, TS; Huang, TY |
