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Showing items 31-40 of 206  (21 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:48:56Z Improving radiation hardness of EEPROM/flash cell by N2O annealing Huang, TY; Jong, FC; Chao, TS; Lin, HC; Leu, LY; Young, K; Lin, CH; Chiu, KY
國立交通大學 2014-12-08T15:48:55Z Comparison of N-2 and NH3 plasma passivation effects on polycrystalline silicon thin-film transistors Lee, YS; Lin, HY; Lei, TF; Huang, TY; Chang, TC; Chang, CY
國立交通大學 2014-12-08T15:47:36Z Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation Lai, CS; Chao, TS; Lei, TF; Lee, CL; Huang, TY; Chang, CY
國立交通大學 2014-12-08T15:47:03Z The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors Wang, MF; Chien, CH; Chao, TS; Lin, HC; Jong, FC; Huang, TY; Chang, CY
國立交通大學 2014-12-08T15:46:47Z Oxide thickness dependence of plasma charging damage Lin, HC; Chen, CC; Wang, MF; Hsien, SK; Chien, CH; Huang, TY; Chang, CY
國立交通大學 2014-12-08T15:46:43Z Leakage current reduction of chemical-vapor-deposited Ta2O5 films on rugged polycrystalline silicon electrode for dynamic random access memory application Lin, M; Chang, CY; Huang, TY; Shieh, WY
國立交通大學 2014-12-08T15:46:37Z Reliability of ultrathin gate oxides for ULSI devices Chang, CY; Chen, CC; Lin, HC; Liang, MS; Chien, CH; Huang, TY
國立交通大學 2014-12-08T15:46:29Z Temperature-accelerated dielectric breakdown in ultrathin gate oxides Chen, CC; Chang, CY; Chien, CH; Huang, TY; Lin, HC; Liang, MS
國立交通大學 2014-12-08T15:46:25Z Highly (111) textured titanium nitride layers for sub- quarter-micrometer Al metallization Wu, WF; Lin, CC; Huang, CC; Lin, HC; Chang, TC; Yang, RP; Huang, TY
國立交通大學 2014-12-08T15:46:20Z A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition Shih, PS; Chang, CY; Chang, TC; Huang, TY; Peng, DZ; Yeh, CF

Showing items 31-40 of 206  (21 Page(s) Totally)
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