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"huang ty"的相关文件
显示项目 31-55 / 206 (共9页)
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| 國立交通大學 |
2014-12-08T15:48:56Z |
Improving radiation hardness of EEPROM/flash cell by N2O annealing
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Huang, TY; Jong, FC; Chao, TS; Lin, HC; Leu, LY; Young, K; Lin, CH; Chiu, KY |
| 國立交通大學 |
2014-12-08T15:48:55Z |
Comparison of N-2 and NH3 plasma passivation effects on polycrystalline silicon thin-film transistors
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Lee, YS; Lin, HY; Lei, TF; Huang, TY; Chang, TC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:47:36Z |
Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
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Lai, CS; Chao, TS; Lei, TF; Lee, CL; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:47:03Z |
The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors
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Wang, MF; Chien, CH; Chao, TS; Lin, HC; Jong, FC; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:47Z |
Oxide thickness dependence of plasma charging damage
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Lin, HC; Chen, CC; Wang, MF; Hsien, SK; Chien, CH; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:43Z |
Leakage current reduction of chemical-vapor-deposited Ta2O5 films on rugged polycrystalline silicon electrode for dynamic random access memory application
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Lin, M; Chang, CY; Huang, TY; Shieh, WY |
| 國立交通大學 |
2014-12-08T15:46:37Z |
Reliability of ultrathin gate oxides for ULSI devices
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Chang, CY; Chen, CC; Lin, HC; Liang, MS; Chien, CH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:46:29Z |
Temperature-accelerated dielectric breakdown in ultrathin gate oxides
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Chen, CC; Chang, CY; Chien, CH; Huang, TY; Lin, HC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:46:25Z |
Highly (111) textured titanium nitride layers for sub- quarter-micrometer Al metallization
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Wu, WF; Lin, CC; Huang, CC; Lin, HC; Chang, TC; Yang, RP; Huang, TY |
| 國立交通大學 |
2014-12-08T15:46:20Z |
A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition
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Shih, PS; Chang, CY; Chang, TC; Huang, TY; Peng, DZ; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:46:15Z |
Characterization and modeling of out-diffusion of manganese and zinc impurities from deep ultraviolet photoresist
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Wang, MY; Ko, FH; Wang, TK; Yang, CC; Huang, TY |
| 國立交通大學 |
2014-12-08T15:46:05Z |
A multilevel interconnect technology with intrametal air gap for high-performance 0.25-mu m-and-beyond devices manufacturing
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Lin, M; Chang, CY; Huang, TY; Lin, ML |
| 國立交通大學 |
2014-12-08T15:46:00Z |
The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)
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Chao, TS; Chang, SJ; Chien, CH; Lin, HC; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:52Z |
Improved immunity to plasma damage in ultrathin nitrided oxides
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Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY |
| 國立交通大學 |
2014-12-08T15:45:46Z |
Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides
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Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:46Z |
The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
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Chang, CY; Lee, YS; Huang, TY; Shih, PS; Lin, CW |
| 國立交通大學 |
2014-12-08T15:45:36Z |
High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantation
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Chang, SJ; Chang, CY; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:45:26Z |
Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films
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Wuu, DS; Horng, RH; Liao, FC; Leu, CC; Huang, TY; Sze, SM; Chen, HY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:26Z |
Effects of O-2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films
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Leu, CC; Chan, SH; Chen, HY; Horng, RH; Wuu, DS; Wu, LH; Huang, TY; Chang, CY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:45:19Z |
Improvements of amorphous-silicon inverted-staggered thin-film transistors using high-temperature-deposited Al gate with chemical mechanical polishing
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Shih, PS; Chang, TC; Liang, CY; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:15Z |
Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation
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Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:10Z |
Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistors
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Shih, PS; Zan, HW; Chang, TC; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:07Z |
Study of boron effects on the reaction of Co and Si1-xGex at various temperatures
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Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:45:05Z |
Plasma-induced charging damage in ultrathin (3-nm) gate oxides
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Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:57Z |
Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides
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Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, TY; Liang, MS |
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