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"lei tf"
Showing items 111-160 of 214 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:06:32Z |
TI-TIO2 GATED MOS DIODE LIGHT SENSOR
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CHANG, CY; KAO, CW; LEI, TF |
| 國立交通大學 |
2014-12-08T15:06:31Z |
METAL-N-GAP SCHOTTKY-BARRIER HEIGHTS
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LEI, TF; LEE, CL; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:06:26Z |
DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURE
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JEN, CW; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:06:15Z |
A SIMPLE METHOD FOR SINGLE-FREQUENCY OPERATION AND AMPLITUDE-STABILIZATION AND FREQUENCY-STABILIZATION OF AN INTERNAL-MIRROR HE-NE-LASER
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PAN, CL; KUO, CC; HSIEH, TC; LEI, TF |
| 國立交通大學 |
2014-12-08T15:06:14Z |
SENSITIVITY OF FREQUENCY STABILITY OF 2-MODE INTERNAL-MIRROR HE-NE LASERS TO MISALIGNMENT OF POLARIZING OPTICS
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PAN, CL; JEAN, PY; KUO, CC; HSIEH, TC; LEI, TF |
| 國立交通大學 |
2014-12-08T15:06:12Z |
SELECTIVE EPITAXY ON SILICON BY ATMOSPHERIC-PRESSURE SIH4-HCL CVD
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HSIEH, TP; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:06:11Z |
A VERTICAL KELVIN TEST STRUCTURE FOR MEASURING THE TRUE SPECIFIC CONTACT RESISTIVITY
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LEI, TF; LEU, LY; LEE, CL |
| 國立交通大學 |
2014-12-08T15:06:03Z |
ELLIPSOMETRY MEASUREMENTS ON SIO2-FILMS FOR THICKNESSES UNDER 200-A
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HO, JH; LEE, CL; JEN, CW; LEI, TF |
| 國立交通大學 |
2014-12-08T15:06:01Z |
THE PD-ZN SYSTEM FOR OHMIC CONTACTS TO P-TYPE GAP
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LEI, TF; JENG, GK |
| 國立交通大學 |
2014-12-08T15:06:00Z |
THE SPREADING RESISTANCE ERROR IN THE VERTICAL KELVIN TEST RESISTOR STRUCTURE FOR THE SPECIFIC CONTACT RESISTIVITY
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LEE, CL; YANG, WL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:57Z |
ERROR REDUCTION IN THE ELLIPSOMETRIC MEASUREMENT ON THIN-FILMS
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HO, JH; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:53Z |
TANTALUM SILICIDE SCHOTTKY CONTACTS TO GAAS
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LEE, CP; LIU, TH; LEI, TF; WU, SC |
| 國立交通大學 |
2014-12-08T15:05:52Z |
SWITCHING CHARACTERISTICS OF MINPN DEVICES
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CHANG, DCY; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:51Z |
AN MINPIM STRUCTURE MIXING DEVICE
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CHANG, DCY; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:48Z |
A SWITCHING DEVICE OF A PN JUNCTION STRUCTURE WITH 2 LAYERS OF THIN OXIDE
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CHANG, DCY; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:46Z |
REFRACTIVE-INDEX PROFILE MEASUREMENT OF COMPOUND THIN-FILMS BY ELLIPSOMETRY
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HO, JH; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:39Z |
NUMERICAL-SIMULATION OF THE VERTICAL KELVIN TEST STRUCTURE FOR SPECIFIC CONTACT RESISTIVITY
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LEU, LY; LEE, CL; LEI, TF; YANG, WL |
| 國立交通大學 |
2014-12-08T15:05:38Z |
ELLIPSOMETRY MEASUREMENT OF THE COMPLEX REFRACTIVE-INDEX AND THICKNESS OF POLYSILICON THIN-FILMS
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HO, JH; LEE, CL; LEI, TF; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:05:37Z |
IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING
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WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:32Z |
ELLIPSOMETRY MEASUREMENTS ON REFRACTIVE-INDEX PROFILES OF THIN-FILMS
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HO, JH; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:26Z |
IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-CONTACTED DIODES AFTER FORWARD BIAS STRESSING
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WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:25Z |
AN SCR WITH SIMPLE MIS STRUCTURE
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CHANG, DCY; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:14Z |
MEASUREMENT OF ULTRATHIN (LESS-THAN-100-A) OXIDE-FILMS BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY
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CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:05:11Z |
A REAL-TIME C-V MEASUREMENT CIRCUIT FOR MOS CAPACITORS UNDER CURRENT STRESSING
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LEE, CL; LEI, TF; HO, JH; WANG, WT |
| 國立交通大學 |
2014-12-08T15:05:03Z |
HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS
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WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:52Z |
POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT
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CHAO, TS; LEE, CL; LEI, TF; YEN, YT |
| 國立交通大學 |
2014-12-08T15:04:50Z |
INVESTIGATION ON THE INTERFACE OF THE POLYCRYSTALLINE SILICON CONTACTED DIODE FORMED WITH A STACKED AMORPHOUS-SILICON FILM
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WU, SL; LEE, CL; LEI, TF; LEE, TL; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:04:48Z |
CHARACTERIZATION OF ULTRATHIN OXIDE PREPARED BY LOW-TEMPERATURE WAFER LOADING AND NITROGEN PREANNEALING BEFORE OXIDATION
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WU, SL; LEE, CL; LEI, TF; LIANG, MS |
| 國立交通大學 |
2014-12-08T15:04:45Z |
A STUDY OF THE INTERFACIAL LAYER OF AL AND AL(1-PERCENT SI)-SI CONTACTS USING A ZERO-LAYER ELLIPSOMETRY MODEL
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CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:42Z |
THE IMPACT OF TITANIUM SILICIDE ON THE CONTACT RESISTANCE FOR SHALLOW JUNCTION FORMED BY OUT-DIFFUSION OF ARSENIC FROM POLYSILICON
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YANG, WL; LEI, TF; HUANG, CT; LEE, CL |
| 國立交通大學 |
2014-12-08T15:04:37Z |
H-2/O-2 PLASMA ON POLYSILICON THIN-FILM TRANSISTOR
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CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:37Z |
ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESS
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WU, SL; LIN, TY; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:31Z |
THE REFRACTIVE-INDEX OF INP AND ITS OXIDE MEASURED BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY
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CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:29Z |
ULTRATHIN TEXTURED POLYCRYSTALLINE OXIDE WITH A HIGH ELECTRON CONDUCTION EFFICIENCY PREPARED BY THERMAL-OXIDATION OF THIN POLYCRYSTALLINE SILICON FILM ON N+ POLYCRYSTALLINE SILICON
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WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:29Z |
THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER
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CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:29Z |
ROLE OF CLADDING LAYER THICKNESSES ON STRAINED-LAYER INGAAS/GAAS SINGLE AND MULTIPLE-QUANTUM-WELL LASERS
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LIU, DC; LEE, CP; TSAI, CM; LEI, TF; TSANG, JS; CHIANG, WH; TU, YK |
| 國立交通大學 |
2014-12-08T15:04:26Z |
ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE
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WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:25Z |
TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS)
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WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:24Z |
CHARACTERIZATION OF SEMIINSULATING POLYCRYSTALLINE SILICON PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
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CHAO, TS; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:24Z |
THE ENHANCED STARK EFFECTS OF COUPLED QUANTUM-WELLS AND THEIR APPLICATION TO TUNABLE IR PHOTODETECTORS
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HUANG, YM; LIEN, CH; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:21Z |
ANOMALOUS DOPING BEHAVIOR OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD; CHAO, CY |
| 國立交通大學 |
2014-12-08T15:04:21Z |
GROWTH OF UNDOPED POLYCRYSTALLINE SI BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM
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LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; CHAO, CY |
| 國立交通大學 |
2014-12-08T15:04:19Z |
CHARACTERISTICS OF POLYSILICON CONTACTED SHALLOW JUNCTION DIODE FORMED WITH A STACKED-AMORPHOUS-SILICON FILM
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WU, SL; LEE, CL; LEI, TF; CHANG, HC |
| 國立交通大學 |
2014-12-08T15:04:16Z |
THIN OXIDE GROWN ON HEAVILY CHANNEL-IMPLANTED SUBSTRATE BY USING A LOW-TEMPERATURE WAFER LOADING AND N2 PRE-ANNEALING PROCESS
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WU, SL; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:15Z |
THE EFFECTS OF H-2-O-2-PLASMA TREATMENT ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS
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CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:07Z |
DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURES
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LIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD |
| 國立交通大學 |
2014-12-08T15:04:06Z |
THE DOUBLE RESONANT ENHANCEMENT OF OPTICAL 2ND-HARMONIC SUSCEPTIBILITY IN THE COMPOSITIONALLY ASYMMETRIC COUPLED-QUANTUM-WELL
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LIEN, CS; HUANG, YM; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:05Z |
CORRELATION OF POLYSILICON THIN-FILM-TRANSISTOR CHARACTERISTICS TO DEFECT STATES VIA THERMAL ANNEALING
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CHERN, HN; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:04:04Z |
MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRY
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CHAO, TS; LEI, TF; CHANG, CY; LEE, CL |
| 國立交通大學 |
2014-12-08T15:04:04Z |
ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION
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WU, SL; LEE, CL; LEI, TF; CHEN, CF; CHEN, LJ; HO, KZ; LING, YC |
Showing items 111-160 of 214 (5 Page(s) Totally)
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