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机构 日期 题名 作者
國立交通大學 2014-12-08T15:06:32Z TI-TIO2 GATED MOS DIODE LIGHT SENSOR CHANG, CY; KAO, CW; LEI, TF
國立交通大學 2014-12-08T15:06:31Z METAL-N-GAP SCHOTTKY-BARRIER HEIGHTS LEI, TF; LEE, CL; CHANG, CY
國立交通大學 2014-12-08T15:06:26Z DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURE JEN, CW; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:06:15Z A SIMPLE METHOD FOR SINGLE-FREQUENCY OPERATION AND AMPLITUDE-STABILIZATION AND FREQUENCY-STABILIZATION OF AN INTERNAL-MIRROR HE-NE-LASER PAN, CL; KUO, CC; HSIEH, TC; LEI, TF
國立交通大學 2014-12-08T15:06:14Z SENSITIVITY OF FREQUENCY STABILITY OF 2-MODE INTERNAL-MIRROR HE-NE LASERS TO MISALIGNMENT OF POLARIZING OPTICS PAN, CL; JEAN, PY; KUO, CC; HSIEH, TC; LEI, TF
國立交通大學 2014-12-08T15:06:12Z SELECTIVE EPITAXY ON SILICON BY ATMOSPHERIC-PRESSURE SIH4-HCL CVD HSIEH, TP; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:06:11Z A VERTICAL KELVIN TEST STRUCTURE FOR MEASURING THE TRUE SPECIFIC CONTACT RESISTIVITY LEI, TF; LEU, LY; LEE, CL
國立交通大學 2014-12-08T15:06:03Z ELLIPSOMETRY MEASUREMENTS ON SIO2-FILMS FOR THICKNESSES UNDER 200-A HO, JH; LEE, CL; JEN, CW; LEI, TF
國立交通大學 2014-12-08T15:06:01Z THE PD-ZN SYSTEM FOR OHMIC CONTACTS TO P-TYPE GAP LEI, TF; JENG, GK
國立交通大學 2014-12-08T15:06:00Z THE SPREADING RESISTANCE ERROR IN THE VERTICAL KELVIN TEST RESISTOR STRUCTURE FOR THE SPECIFIC CONTACT RESISTIVITY LEE, CL; YANG, WL; LEI, TF
國立交通大學 2014-12-08T15:05:57Z ERROR REDUCTION IN THE ELLIPSOMETRIC MEASUREMENT ON THIN-FILMS HO, JH; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:53Z TANTALUM SILICIDE SCHOTTKY CONTACTS TO GAAS LEE, CP; LIU, TH; LEI, TF; WU, SC
國立交通大學 2014-12-08T15:05:52Z SWITCHING CHARACTERISTICS OF MINPN DEVICES CHANG, DCY; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:51Z AN MINPIM STRUCTURE MIXING DEVICE CHANG, DCY; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:48Z A SWITCHING DEVICE OF A PN JUNCTION STRUCTURE WITH 2 LAYERS OF THIN OXIDE CHANG, DCY; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:46Z REFRACTIVE-INDEX PROFILE MEASUREMENT OF COMPOUND THIN-FILMS BY ELLIPSOMETRY HO, JH; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:39Z NUMERICAL-SIMULATION OF THE VERTICAL KELVIN TEST STRUCTURE FOR SPECIFIC CONTACT RESISTIVITY LEU, LY; LEE, CL; LEI, TF; YANG, WL
國立交通大學 2014-12-08T15:05:38Z ELLIPSOMETRY MEASUREMENT OF THE COMPLEX REFRACTIVE-INDEX AND THICKNESS OF POLYSILICON THIN-FILMS HO, JH; LEE, CL; LEI, TF; CHAO, TS
國立交通大學 2014-12-08T15:05:37Z IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING WU, SL; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:32Z ELLIPSOMETRY MEASUREMENTS ON REFRACTIVE-INDEX PROFILES OF THIN-FILMS HO, JH; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:26Z IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-CONTACTED DIODES AFTER FORWARD BIAS STRESSING WU, SL; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:25Z AN SCR WITH SIMPLE MIS STRUCTURE CHANG, DCY; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:14Z MEASUREMENT OF ULTRATHIN (LESS-THAN-100-A) OXIDE-FILMS BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY CHAO, TS; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:11Z A REAL-TIME C-V MEASUREMENT CIRCUIT FOR MOS CAPACITORS UNDER CURRENT STRESSING LEE, CL; LEI, TF; HO, JH; WANG, WT
國立交通大學 2014-12-08T15:05:03Z HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS WU, SL; LEE, CL; LEI, TF

显示项目 111-135 / 214 (共9页)
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