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Showing items 26-35 of 214  (22 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:44:51Z High quality ultrathin CoTiO3 high-k gate dielectrics Pan, TM; Lei, TF; Chao, TS; Chang, KL; Hsieh, KC
國立交通大學 2014-12-08T15:44:48Z Postexposure delay effect on linewidth variation in base added chemically amplified resist Ku, CY; Shieh, JM; Chiou, TB; Lin, HK; Lei, TF
國立交通大學 2014-12-08T15:44:47Z Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology Pan, TM; Lei, TF; Chao, TS; Liaw, MC; Lu, CP
國立交通大學 2014-12-08T15:44:41Z Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N-2/N2O annealing Chen, JH; Lei, TF; Chao, TS
國立交通大學 2014-12-08T15:44:20Z A novel thin-film transistor with self-aligned field induced drain Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF
國立交通大學 2014-12-08T15:44:15Z High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment Pan, TM; Lei, TF; Yang, WL; Cheng, CM; Chao, TS
國立交通大學 2014-12-08T15:44:05Z High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films Pan, TM; Lei, TF; Chao, TS
國立交通大學 2014-12-08T15:44:02Z Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics Pan, TM; Lei, TF; Chao, TS
國立交通大學 2014-12-08T15:44:00Z High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon film Lee, JW; Lee, CL; Lei, TF; Lai, CS
國立交通大學 2014-12-08T15:43:52Z Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment Pan, TM; Lei, TF; Wen, HC; Chao, TS

Showing items 26-35 of 214  (22 Page(s) Totally)
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