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"lei tf"的相关文件
显示项目 26-75 / 214 (共5页) 1 2 3 4 5 > >> 每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:44:51Z |
High quality ultrathin CoTiO3 high-k gate dielectrics
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Pan, TM; Lei, TF; Chao, TS; Chang, KL; Hsieh, KC |
| 國立交通大學 |
2014-12-08T15:44:48Z |
Postexposure delay effect on linewidth variation in base added chemically amplified resist
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Ku, CY; Shieh, JM; Chiou, TB; Lin, HK; Lei, TF |
| 國立交通大學 |
2014-12-08T15:44:47Z |
Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology
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Pan, TM; Lei, TF; Chao, TS; Liaw, MC; Lu, CP |
| 國立交通大學 |
2014-12-08T15:44:41Z |
Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N-2/N2O annealing
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Chen, JH; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:20Z |
A novel thin-film transistor with self-aligned field induced drain
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Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:44:15Z |
High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
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Pan, TM; Lei, TF; Yang, WL; Cheng, CM; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:05Z |
High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films
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Pan, TM; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:02Z |
Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics
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Pan, TM; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:00Z |
High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon film
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Lee, JW; Lee, CL; Lei, TF; Lai, CS |
| 國立交通大學 |
2014-12-08T15:43:52Z |
Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment
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Pan, TM; Lei, TF; Wen, HC; Chao, TS |
| 國立交通大學 |
2014-12-08T15:43:50Z |
One-step cleaning solution to replace the conventional RCA two-step cleaning recipe for pregate oxide cleaning
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Pan, TM; Lei, TF; Chao, TS; Liaw, MC; Ko, FH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:43:47Z |
Focus measurement with a simple pattern design
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Ku, CY; Lei, TF; Lin, HK |
| 國立交通大學 |
2014-12-08T15:43:39Z |
High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices
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Yang, WL; Chao, TS; Cheng, CM; Pan, TM; Lei, TF |
| 國立交通大學 |
2014-12-08T15:43:37Z |
The enhancement of nitrogen incorporation in RTN2O annealed TEOS oxide fabricated on disilane-based polysilicon films
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Lee, JW; Chen, WD; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:43:37Z |
Expanding the process window and reducing the optical proximity effect by post-exposure delay
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Ku, CY; Shieh, JM; Chiou, TB; Lin, HK; Lei, TF |
| 國立交通大學 |
2014-12-08T15:43:31Z |
Improvements in both thermal stability of Ni-silicide and electrical reliability of gate oxides using a stacked polysilicon gate structure
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Lee, JW; Lin, SX; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:43:30Z |
Monitoring lithographic focus and tilting performance by off-line overlay measurement tools
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Ku, CY; Lei, TF; Cheng, DS |
| 國立交通大學 |
2014-12-08T15:43:27Z |
Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering
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Pan, TM; Chien, CH; Lei, TF; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:43:27Z |
An investigation of scanning capacitance microscopy on iron-contaminated p-type silicon
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Chang, MN; Chang, TY; Pan, FM; Wu, BW; Lei, TF |
| 國立交通大學 |
2014-12-08T15:43:19Z |
Thin tunnel oxide grown on silicon substrate pretreated by CF4 plasma
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Lee, JW; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:43:18Z |
Comparison of novel cleaning solutions, with various chelating agents for post-CMP cleaning on poly-Si film
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Pan, TM; Lei, TF; Ko, FH; Chao, TS; Chiu, TH; Lee, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:43:07Z |
Nitrogen implantation and in situ HF vapor clean for deep submicrometer n-MOSFETs
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Chen, JH; Lei, TF; Chen, CL; Chao, TS; Wen, WY; Chen, KT |
| 國立交通大學 |
2014-12-08T15:42:25Z |
Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate
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Yu, M; Lin, HC; Chen, GH; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:42:23Z |
Performance evaluation of cleaning solutions enhanced with tetraalkylammonium hydroxide substituents for post-CMP cleaning on poly-Si film
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Pan, TM; Lei, TF; Ko, FH; Chao, TS; Liaw, MC; Lee, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:42:22Z |
Thin oxides grown on disilane-based polysilicon
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Lee, JW; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process
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Chang, TY; Lei, TF; Chao, TS; Wen, HC; Chen, HW |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models
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Li, YM; Lee, JW; Tang, TW; Chao, TS; Lei, TF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:06Z |
Observation of differential capacitance images on slightly iron-contaminated p-type silicon
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Chang, MN; Chen, CY; Pan, FM; Chang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:42:06Z |
Self-aligned fabrication of thin-film transistors with field-induced drain
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Yu, CM; Lin, HC; Lin, CY; Yeh, KL; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:42:06Z |
Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process
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Chang, TY; Lei, TF; Chao, TS; Chen, SW; Kao, LM; Chen, SK; Tuan, A; Su, TP |
| 國立交通大學 |
2014-12-08T15:41:51Z |
A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film
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Wang, JC; Chiao, SH; Lee, CL; Lei, TF; Lin, YM; Wang, MF; Chen, SC; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:41:47Z |
Improving the electrical integrity of Cu-CoSi2 contacted n(+)p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier
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Yang, WL; Wu, WF; You, HC; Ou, KL; Lei, TF; Chou, CP |
| 國立交通大學 |
2014-12-08T15:41:43Z |
Effect of CF4 plasma pretreatment on low temperature oxides
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Chang, TY; Chen, HW; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:41:37Z |
Growing high-performance tunneling oxide by CF4 plasma pretreatment
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Chang, TY; Lee, JW; Lei, TF; Lee, CL; Wen, HC |
| 國立交通大學 |
2014-12-08T15:41:32Z |
Characteristics of vertical thermal/PECVD polysilicon oxides formed on the sidewall of polysilicon films
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Lee, MZ; Chang, YA; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:41:27Z |
Effects of BCl3 passivation on Pt/Al/n-InP diodes
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Huang, WC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:41:08Z |
Novel vertical polysilicon thin-film transistor with excimer-laser annealing
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Lee, MZ; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:41:01Z |
Highly reliable nickel silicide formation with a Zr capping layer
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Lee, TL; Lee, JW; Lee, MC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:40:24Z |
A one-step single-cleaning solution for CMOS processes
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Chao, TS; Yeh, CH; Pan, TM; Lei, TF; Li, YH |
| 國立交通大學 |
2014-12-08T15:40:13Z |
Characterization of temperature dependence for HfO2 gate dielectrics treated in NH3 plasma
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Wang, JC; Shie, DC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:40:06Z |
High reliability ultrathin interpolyoxynitride dielectrics prepared by N2O plasma annealing
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Wang, JC; Lee, JW; Kuo, LT; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:40:05Z |
H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions
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Yu, CM; Lin, HC; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Carrier transportation of rapid thermal annealed CeO2 gate dielectrics
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Wang, JC; Chiang, KC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:39:40Z |
Improved characteristics of ultrathin CeO2 by using postnitridation annealing
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Wang, JC; Hung, YP; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:29Z |
Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics
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Wang, JC; Shie, DC; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Efficient improvement of hot-carrier-induced device's degradation for sub-0.1 mu m complementary metal-oxide-semiconductor field-effect-transistor technology
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Lin, JC; Yeh, WK; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:00Z |
Fabrication of sub-60-nm contact holes in silicon dioxide layers
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Ko, FH; You, HC; Chu, TC; Lei, TF; Hsu, CC; Chen, HL |
| 國立交通大學 |
2014-12-08T15:38:47Z |
Novel one-step aqueous solutions to replace pregate oxide cleans
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Pan, TM; Lei, TF; Ko, FH; Chao, TS; Chin, TH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:38:37Z |
Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure
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Kuo, PY; Chao, TS; Lei, TF |
| 國立交通大學 |
2014-12-08T15:37:17Z |
Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors
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Wang, YW; Cheng, HL; Wang, YK; Hu, TH; Ho, JC; Lee, CC; Lei, TF; Yeh, CF |
显示项目 26-75 / 214 (共5页) 1 2 3 4 5 > >> 每页显示[10|25|50]项目
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