|
English
|
正體中文
|
简体中文
|
總筆數 :2856699
|
|
造訪人次 :
53577299
線上人數 :
828
教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
|
|
|
"lei tf"的相關文件
顯示項目 26-35 / 214 (共22頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:44:51Z |
High quality ultrathin CoTiO3 high-k gate dielectrics
|
Pan, TM; Lei, TF; Chao, TS; Chang, KL; Hsieh, KC |
| 國立交通大學 |
2014-12-08T15:44:48Z |
Postexposure delay effect on linewidth variation in base added chemically amplified resist
|
Ku, CY; Shieh, JM; Chiou, TB; Lin, HK; Lei, TF |
| 國立交通大學 |
2014-12-08T15:44:47Z |
Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology
|
Pan, TM; Lei, TF; Chao, TS; Liaw, MC; Lu, CP |
| 國立交通大學 |
2014-12-08T15:44:41Z |
Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N-2/N2O annealing
|
Chen, JH; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:20Z |
A novel thin-film transistor with self-aligned field induced drain
|
Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:44:15Z |
High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
|
Pan, TM; Lei, TF; Yang, WL; Cheng, CM; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:05Z |
High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films
|
Pan, TM; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:02Z |
Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics
|
Pan, TM; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:00Z |
High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon film
|
Lee, JW; Lee, CL; Lei, TF; Lai, CS |
| 國立交通大學 |
2014-12-08T15:43:52Z |
Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment
|
Pan, TM; Lei, TF; Wen, HC; Chao, TS |
顯示項目 26-35 / 214 (共22頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
|