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教育部委托研究计画 计画执行:国立台湾大学图书馆
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"lei tf"的相关文件
显示项目 186-195 / 214 (共22页)
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| 國立交通大學 |
2014-12-08T15:03:03Z |
LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER AS SOLID DIFFUSION SOURCE FOR POLYSILICON CONTACTED P(+)-N SHALLOW JUNCTION
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LEI, TF; CHEN, TP; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:03Z |
CHARACTERISTICS OF TOP-GATE THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS
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YANG, CK; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:01Z |
CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM
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LIN, HY; LEI, TF; LIN, HC; CHANG, CY; TWU, RC; DENG, RC; LIN, JD |
| 國立交通大學 |
2014-12-08T15:03:00Z |
RADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
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YANG, CK; LEE, CL; LEI, TF; CHERN, HN |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Characterization of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon
|
Wu, SL; Chiao, DM; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET
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Wu, SL; Lee, CL; Lei, TF |
| 國立交通大學 |
2014-12-08T15:02:49Z |
Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films
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Chang, CY; Lin, HY; Lei, TF; Cheng, JY; Chen, LP; Dai, BT |
| 國立交通大學 |
2014-12-08T15:02:47Z |
The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source
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Huang, CT; Lei, TF; Chu, CH; Shvu, SH |
| 國立交通大學 |
2014-12-08T15:02:40Z |
A novel vertical bottom-gate polysilicon thin film transistor with self-aligned offset
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Lai, CS; Lee, CL; Lei, TF; Chern, HN |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS
|
Lin, YH; Lai, CS; Lee, CL; Lei, TF; Chao, TS |
显示项目 186-195 / 214 (共22页)
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