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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立交通大學 2014-12-08T15:03:03Z LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER AS SOLID DIFFUSION SOURCE FOR POLYSILICON CONTACTED P(+)-N SHALLOW JUNCTION LEI, TF; CHEN, TP; LIN, HC; CHANG, CY
國立交通大學 2014-12-08T15:03:03Z CHARACTERISTICS OF TOP-GATE THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS YANG, CK; LEI, TF; LEE, CL
國立交通大學 2014-12-08T15:03:01Z CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM LIN, HY; LEI, TF; LIN, HC; CHANG, CY; TWU, RC; DENG, RC; LIN, JD
國立交通大學 2014-12-08T15:03:00Z RADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS YANG, CK; LEE, CL; LEI, TF; CHERN, HN
國立交通大學 2014-12-08T15:02:53Z Characterization of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon Wu, SL; Chiao, DM; Lee, CL; Lei, TF
國立交通大學 2014-12-08T15:02:53Z Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET Wu, SL; Lee, CL; Lei, TF
國立交通大學 2014-12-08T15:02:49Z Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films Chang, CY; Lin, HY; Lei, TF; Cheng, JY; Chen, LP; Dai, BT
國立交通大學 2014-12-08T15:02:47Z The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source Huang, CT; Lei, TF; Chu, CH; Shvu, SH
國立交通大學 2014-12-08T15:02:40Z A novel vertical bottom-gate polysilicon thin film transistor with self-aligned offset Lai, CS; Lee, CL; Lei, TF; Chern, HN
國立交通大學 2014-12-08T15:02:33Z Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS Lin, YH; Lai, CS; Lee, CL; Lei, TF; Chao, TS
國立交通大學 2014-12-08T15:02:24Z A novel structure for three-dimensional silicon magnetic transducers to improve the sensitivity symmetry Lin, HY; Lei, TF; Jeng, JJ; Pan, CL; Chang, CY
國立交通大學 2014-12-08T15:02:21Z Characteristics of top-gate polysilicon thin-film transistors fabricated on fluorine-implanted and crystallized amorphous silicon films Yang, CK; Lei, TF; Lee, CL
國立交通大學 2014-12-08T15:02:21Z Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor Chao, TS; Liaw, MC; Chu, CH; Chang, CY; Chien, CH; Hao, CP; Lei, TF
國立交通大學 2014-12-08T15:02:20Z High-resolution MOS magnetic sensor with thin oxide in standard submicron CMOS process Yang, HM; Huang, YC; Lei, TF; Lee, CL; Chao, SC
國立交通大學 2014-12-08T15:02:16Z Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors Lin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP
國立交通大學 2014-12-08T15:02:13Z Suppression of boron penetration in BF2+-implanted poly-Si gate Chao, TS; Chu, CH; Wang, CF; Ho, KJ; Lei, TF; Lee, CL
國立交通大學 2014-12-08T15:02:08Z Investigation of the polarity asymmetry on the electrical characteristics of thin polyoxides grown on N+ polysilicon Wu, SL; Chen, CY; Lin, TY; Lee, CL; Lei, TF; Liang, MS
國立交通大學 2014-12-08T15:02:07Z A novel planarization of oxide-filled shallow-trench isolation Cheng, JY; Lei, TF; Chao, TS; Yen, DLW; Lin, CJ
國立交通大學 2014-12-08T15:02:02Z Effects of bromine-methanol and hydrogen chloride pretreatments on Pt/Al/n-InP diodes Huang, WC; Lei, TF; Lee, CL
國立交通大學 2014-12-08T15:01:56Z A novel shallow trench isolation technique Cheng, JY; Lei, TF; Chao, TS
國立交通大學 2014-12-08T15:01:56Z Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation Chao, TS; Chien, CH; Hao, CP; Liaw, MC; Chu, CH; Chang, CY; Lei, TF; Sun, WT; Hsu, CH
國立交通大學 2014-12-08T15:01:54Z MOS magnetic current sensor based on standard CMOS process Yang, HM; Lei, TF; Huang, YC; Lee, CL
國立交通大學 2014-12-08T15:01:44Z Hydrogen and oxygen plasma effects on polycrystalline silicon thin films of various thicknesses Liou, BW; Lee, CL; Lei, TF; Wu, YH
國立交通大學 2014-12-08T15:01:42Z Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure Yang, WL; Lin, CJ; Chao, TS; Liu, DG; Lei, TF
國立交通大學 2014-12-08T15:01:39Z Plasma charging damage and water-related hot-carrier reliability in the deposition of plasma-enhanced tetraethylorthosilicate oxide Lin, YM; Jang, SM; Yu, CH; Lei, TF; Chen, JY

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