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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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2019臺灣學術機構典藏
研討會
機構典藏系統RC7版本已
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Institution Date Title Author
國立臺灣海洋大學 2009-11 Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors Wen-Chau Liu; Ghun-Wei Ku; Der-Feng Guo; Jung-Hui Tsai; Wen-Shiung Lour; Shiou-Ying Cheng; Chi-Jhung Lee; Tzu-Pin Chen
義守大學 2009-04 On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure Chih-Hung Yen; Yi-Jung Liu;Kuo-Hui Yu;Pei-Ling Lin;Tzu-Pin Chen; Li-Yang Chen; Tsung-Han Tsai; Nan-Yi Huang; Chong-Yi Lee; Wen-Chau Liu
國立高雄師範大學 2009 On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2009 Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistors Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Ghun-Wei Ku;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2009 On an InP/InGaAs heterobipolar transistor with an InAlGaAs/InP step-graded heterostructure collector Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Kun-Wei Lin;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學 2009 On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) Tzu-Pin Chen; Chi-Jhung Lee; Wen-Shiung Lour; Der-Feng Guo; Jung-Hui Tsai; Wen-Chau Liu
國立臺灣海洋大學 2008-12-09 Effect of Emitter Ledge Thickness on InGaP ∕ GaAs Heterojunction Bipolar Transistors Tzu-Pin Chen; Chi-Jhung Lee; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Ghun-Wei Ku; Wen-Chau Liu
義守大學 2008-11 A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure Chih-Hung Yen; Yi-Jung Liu; Nan-Yi Huang; Kuo-Hui Yu; Tzu-Pin Chen; Li-Yang Chen; Tsung-Han Tsai; Chong-Yi Lee; Wen-Chau Liu;
國立高雄師範大學 2008 Effect of non-annealed Ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor Jung-Hui Tsai;Li-Yang Chen;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Tsung-Han Tsai;Tzu-Pin Chen;Yi-Chun Liu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2008 Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors Jung-Hui Tsai;Kuei-Yi Chu;Shiou-Ying Cheng;Tzu-Pin Chen;Li-Yang Chen;Tsung-Han Tsai;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學 2008 Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor Li-Yang Chen; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Tsung-Han Tsai; Tzu-Pin Chen; Yi-Chun Liu; Wen-Chau Liu
國立高雄師範大學 2007 Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Shiou-Ying Cheng;Der-Feng Guo;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2007 Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2007 Improved performance of a composite passivate heterojunction bipolar transistor (HBT) Jung-Hui Tsai;Ssu-Yi Fu;Tzu-Pin Chen;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學 2006 Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor Tzu-Pin Chen;Ssu-I Fu;Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Shiou-Ying Cheng;Wen-Chau Liu

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