| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum well
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum wells
|
C. J. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 國立交通大學 |
2019-04-02T06:00:32Z |
Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy
|
Huan, Ya-Wei; Wang, Xing-Lu; Liu, Wen-Jun; Dong, Hong; Long, Shi-Bing; Sun, Shun-Ming; Yang, Jian-Guo; Wu, Su-Dong; Yu, Wen-Jie; Horng, Ray-Hua; Xia, Chang-Tai; Yu, Hong-Yu; Lu, Hong-Liang; Sun, Qing-Qing; Ding, Shi-Jin; Zhang, David Wei |
| 國立交通大學 |
2014-12-08T15:31:26Z |
Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
|
Hai Dang Trinh; Minh Thuy Nguyen; Lin, Yueh Chin; Quoc Van Duong; Hong Quan Nguyen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:30:42Z |
Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer
|
Liao, Yu-An; Hsu, Wei-Ting; Huang, Shih-Han; Chiu, Pei-Chin; Chyi, Jen-Inn; Chang, Wen-Hao |
| 臺大學術典藏 |
2021-09-02T00:03:49Z |
Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces
|
Lan H.-S;Liu C.W.; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 國立成功大學 |
2006-11-06 |
Band anticrossing in InGaPN alloys induced by N-related localized states
|
Lin, Kuang-I; Huang, Wung-Hong |
| 國立彰化師範大學 |
2010-08 |
Band Bending at the Conducting Polymer/Indium Tin Oxide Interfaces with and without Ultraviolet Treatment
|
Lin, Yow-Jon; Chin, Yi-Min; Lin, Jung-Chung; Su, Yu-Chao |
| 國立彰化師範大學 |
2003-07 |
Band Bending on the Reactive-ion-etched and (NH4)2Sx-treated Mg-doped P-GaN Surface
|
Lin, Yow-Jon; Hsu, C. W. ; Ker, Q. ; Li, Z. D. |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Band calculation of lonsdaleite Ge
|
Chen P.-S;Fan S.-T;Lan H.-S;Liu C.W.; Chen P.-S; Fan S.-T; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 國立交通大學 |
2014-12-08T15:05:36Z |
BAND DISCONTINUITIES - A SIMPLE ELECTROCHEMICAL APPROACH
|
CHANG, KM |
| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Band discontinuity in InAsPSb alloy system
|
C. Y. Tsai;W. C. Chen;P. H. Chang;C. I. Wu;H. H. Lin; C. Y. Tsai; W. C. Chen; P. H. Chang; C. I. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:14Z |
Band Edge Diagram Construction for the Design of Photonic Crystal Fibers Composed of Materials with Arbitrary Anisotropy
|
S. M. Hsu; H. C. Chang; HUNG-CHUN CHANG |
| 臺大學術典藏 |
2022-08-09T03:50:21Z |
Band Edge Tailoring in Few-Layer Two-Dimensional Molybdenum Sulfide/Selenide Alloys
|
Lin Y.-R.; Cheng W.-H.; Richter M.H.; Duchene J.S.; Peterson E.A.; Went C.M.; Al Balushi Z.Y.; Jariwala D.; Neaton J.B.; Chen L.-C.; Atwater H.A.; Lin Y.-R.; Chen L.-C.; LI-CHYONG CHEN |
| 國立成功大學 |
2015-01 |
Band engineering magneto-resistance effect in Co:a-C films
|
Chuang, P. Y.; Huang, J. C. A.; Lu, P. E.; Hsu, H. S.; Sun, S. J.; Yang, Y. W.; Chen, J. M.; Lee, C. H. |
| 國立中山大學 |
1997-07-20 |
Band engineering of ZnSe/ZnCdSe Quantum wells for the application of Blue-Green Laser
|
Ikai Lo;S.J. Chen;W.C. Wu;L.W. Tu;W.C. Hsu;Y.C. Lee;R.C. Tu;Y.K. Su |
| 國立交通大學 |
2016-03-28T00:04:27Z |
Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:55:47Z |
Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 中國醫藥大學 |
2008-06 |
Band Expansion-Based Over-Complete Independent Component Analysis for Multispectral Processing of Magnetic Resonance Images
|
歐陽彥杰(Yen-Chieh Ouyang); 陳享民(Hsian-Min Chen); 蔡志文(Jyh Wen Chai); 陳啟昌(Clayton Chi-Chang Chen)*; 潘錫光(Sek-Kwong Poon); 楊晴雯(Ching-Wen Yang); 李三剛(San-Kan Lee); 張建禕(Chein-I Chang) |
| 臺大學術典藏 |
2018-09-10T08:21:58Z |
Band gap aligned conducting interface modifier enhances the performance of thermal stable polymer- TiO2nanorod solar cell
|
Huang, Y.-C.;Yen, W.-C.;Liao, Y.-C.;Yu, Y.-C.;Hsu, C.-C.;Ho, M.-L.;Chou, P.-T.;Su, W.-F.; Huang, Y.-C.; Yen, W.-C.; Liao, Y.-C.; Yu, Y.-C.; Hsu, C.-C.; Ho, M.-L.; Chou, P.-T.; Su, W.-F.; CHENG-CHIH HSU; WEI-FANG SU; PI-TAI CHOU |
| 國立臺灣大學 |
2010 |
Band gap aligned conducting interface modifier enhances the performance of thermal stable polymer-TiO(2) nanorod solar cell
|
Huang, Yu-Ching; Yen, Wei-Che; Liao, Yu-Chia; Yu, Ya-Chien; Hsu, Cheng-Chih; Ho, Mei-Lin; Chou, Pi-Tai; Su, Wei-Fang |
| 國立臺灣大學 |
2006 |
Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
|
Zhao, J.; Chen, J.; Feng, Z.C.; Chen, J.L.; Liu, R.; Xu, G. |
| 國立臺灣大學 |
2003-09 |
Band Gap Dependence of Field Emission From One Dimensional Nanostructures Grown on N-type and P-type Silicon Substrates
|
Chang, CS; Chattopadhyay, S; Chen, LC; et, al. |
| 國立成功大學 |
2020-04 |
Band gap engineered ternary semiconductor PbxCd1-xS: Nanoparticle-sensitized solar cells with an efficiency of 8.5% under 1% sun-A combined theoretical and experimental study
|
Boon-on;Patsorn;Lien;Shang-Wei;Chang;Tay-Rong;Shi;Jen-Bin;Lee;Ming-Way |
| 國立成功大學 |
2020 |
Band gap engineered ternary semiconductor PbxCd1−xS: Nanoparticle-sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study
|
Boon-on, P.;Lien, S.-W.;Chang, T.-R.;Shi, J.-B.;Lee, M.-W. |
