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Showing items 219761-219770 of 2351408  (235141 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T07:08:01Z Band alignment of InAsSb/InAsPSb quantum well C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:01Z Band alignment of InAsSb/InAsPSb quantum wells C. J. Wu; H. H. Lin; HAO-HSIUNG LIN
國立交通大學 2019-04-02T06:00:32Z Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy Huan, Ya-Wei; Wang, Xing-Lu; Liu, Wen-Jun; Dong, Hong; Long, Shi-Bing; Sun, Shun-Ming; Yang, Jian-Guo; Wu, Su-Dong; Yu, Wen-Jie; Horng, Ray-Hua; Xia, Chang-Tai; Yu, Hong-Yu; Lu, Hong-Liang; Sun, Qing-Qing; Ding, Shi-Jin; Zhang, David Wei
國立交通大學 2014-12-08T15:31:26Z Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures Hai Dang Trinh; Minh Thuy Nguyen; Lin, Yueh Chin; Quoc Van Duong; Hong Quan Nguyen; Chang, Edward Yi
國立交通大學 2014-12-08T15:30:42Z Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer Liao, Yu-An; Hsu, Wei-Ting; Huang, Shih-Han; Chiu, Pei-Chin; Chyi, Jen-Inn; Chang, Wen-Hao
臺大學術典藏 2021-09-02T00:03:49Z Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces Lan H.-S;Liu C.W.; Lan H.-S; Liu C.W.; CHEE-WEE LIU
國立成功大學 2006-11-06 Band anticrossing in InGaPN alloys induced by N-related localized states Lin, Kuang-I; Huang, Wung-Hong
國立彰化師範大學 2010-08 Band Bending at the Conducting Polymer/Indium Tin Oxide Interfaces with and without Ultraviolet Treatment Lin, Yow-Jon; Chin, Yi-Min; Lin, Jung-Chung; Su, Yu-Chao
國立彰化師範大學 2003-07 Band Bending on the Reactive-ion-etched and (NH4)2Sx-treated Mg-doped P-GaN Surface Lin, Yow-Jon; Hsu, C. W. ; Ker, Q. ; Li, Z. D.
臺大學術典藏 2021-09-02T00:03:50Z Band calculation of lonsdaleite Ge Chen P.-S;Fan S.-T;Lan H.-S;Liu C.W.; Chen P.-S; Fan S.-T; Lan H.-S; Liu C.W.; CHEE-WEE LIU

Showing items 219761-219770 of 2351408  (235141 Page(s) Totally)
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