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Institution	Date	Title	Author
國立臺灣大學	2001-01	Bonding Characterization and Nano-indentation Study of Amorphous SiCxNy Films with and without Hydrogen Incorporation	Lo, H. C.; Wu, J.-J.; Wen, C. Y.; Wong, T. S.; Lin, S. T.; Chen, K. H.; Chen, L. C.
國立臺灣科技大學	2001	Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation	K.H. Chen;L.C. Chen;S.T. Lin;H.C. Lo;C.Y. Wen;T.S. Wong;J.J. Wu
臺大學術典藏	2020-01-06T03:11:08Z	Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation	Lo, H. C.; Wu, J. J.; Wen, C. Y.; Wong, T. S.; Lin, S. T.; Chen, K. H.; Chen, L. C.; SHIANG-TAI LIN
臺大學術典藏	2022-08-09T03:50:44Z	Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation	Lo H.C; Wu J.J; Wen C.Y; Wong T.S; Lin S.T; Chen K.H; Chen L.C; Lo H.C; Wu J.J; Wen C.Y; Wong T.S; Lin S.T; Chen K.H; Chen L.C; LI-CHYONG CHEN
國立臺灣大學	2002-11	Bonding Characterization, Density Measurement and Thermal Diffusivity Studies of Amorphous Silicon Carbon Nitride and Boron Carbon Nitride Thin Films	Chattopadhyay S; Chen LC; Chien SC
臺大學術典藏	2020-01-06T03:11:07Z	Bonding characterization, density measurement, and thermal diffusivity studies of amorphous silicon carbon nitride and boron carbon nitride thin films	Chattopadhyay, S.; Chen, L. C.; Chien, S. C.; Lin, S. T.; Chen, K. H.; SHIANG-TAI LIN
朝陽科技大學	2010	BONDING FRACTIONATION OF ANIONIC / CATIONIC CHROMIUM IN SOIL AND INFLUENCE OF pH ON SOIL WASHING EFFICIENCY	章日行; S. F. Cheng; Y. T. Tu; C. M. Kao; J. H. Chang; C. Y. Huang ; C.W. Chen
國立成功大學	2000-08-18	Bonding geometry and reactivity of methoxy and ethoxy groups adsorbed on powdered TiO2	Wu, Wen-Chun; Chuang, Chih-Chung; Lin, Jong-Liang
臺大學術典藏	2003	Bonding interaction, low-lying states and excited charge-transfer states of pyridine-metal clusters: Pyridine-Mn (M = Cu, Ag, Au; n = 2-4)	Wu, D. Y.; Hayashi, M.; Chang, C. H.; Liang, K. K.; Lin, S. H.
國立交通大學	2014-12-08T15:37:06Z	Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures	Liu, PC; Wu, YCS

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