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Institution	Date	Title	Author
臺大學術典藏	2021-08-05T02:37:10Z	Breakage behavior of gravel rock particles under impact force	Zhao H;Liu C;Zhang J;Ge L.; Zhao H; Liu C; Zhang J; Ge L.; YU-NING GE
臺北市立大學	2005	Breakdown analysis on distributed group communication	Wei, W.J.; 魏惠貞; Lee, L.C.
中國文化大學	2010-12	Breakdown and Reformation of the Intertropical Convergence Zone in a Moist Atmosphere	Wang, CC (Wang, Chia-Chi); Chou, C (Chou, Chia); Lee, WL (Lee, We-Liang)
國立臺灣大學	2010	Breakdown and reformation of the intertropical convergence zone in a moist atmosphere	Wang, Chia-Chi; Chou, Chia; Lee, We-Liang
國立聯合大學	2004	Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress	李宜穆, Y. Wu and G. Lucovsky
國立成功大學	2002-11	Breakdown and stress-induced oxide degradation mechanisms in MOSFETs	Chen, J. H.; Wei, C. T.; Hung, S. M.; Wong, Shyh-Chyi; Wang, Yeong-Her
國立臺灣大學	2008	Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect	Su, V.C.; Lin, I.S.; Kuo, J.B.; Lin, G.S.; Chen, D.; Yeh, C.S.; Tsai, C.T.; Ma, M.
臺大學術典藏	2018-09-10T07:08:18Z	Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect	I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
亞洲大學	2023	Breakdown Behavior of a Nitrogen Implanted AlGaN/GaN HEMT Transistor with different Metal Contact Positions	RAMYASRI, MOGARALA
國立高雄師範大學	2001	Breakdown Characteristics of Ultra-thin Gate Oxide ( < 4nm ) in MOS Structure Subjected Substrate Injection	Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏

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