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Showing items 418406-418415 of 2348487 (234849 Page(s) Totally) << < 41836 41837 41838 41839 41840 41841 41842 41843 41844 41845 > >> View [10|25|50] records per page
| 元智大學 |
2007-08 |
Fabrication and characterization of Fe3+-doped titania semiconductor electrodes with p-n homojunction devices
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廖朝光; 林炬澈(Chu-Che Lin) |
| 國立交通大學 |
2014-12-08T15:36:06Z |
Fabrication and characterization of field-effect transistors with suspended-nanowire channels
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Kuo, Chia-Hao; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2019-04-03T06:44:24Z |
Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates
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Lyu, Rong-Jhe; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 南台科技大學 |
2021-05 |
Fabrication and characterization of flexible hybrid transparent electrodes with broadband transparency
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Keh-Moh Lin;Swapnil Shinde;Ru-Li Lin;Wen-Tse Hsiao;Pankaj Koinkar |
| 國立臺灣海洋大學 |
2012-12 |
Fabrication and Characterization of Flexible PZT Fiber and Composite
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Chung-Hao Yi; Chia-Hsin Lin; Yi-Hui Wang; Syh-Yuh Cheng; Horng-Yi Chang |
| 臺大學術典藏 |
2019-11-04T06:42:12Z |
Fabrication and characterization of flexible thermoelectric generators using micromachining and electroplating techniques
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CHENG-CHIH HSU;Dai, Ching Liang;Lee, Wnag Lin;Shih, Po Jen; CHENG-CHIH HSU; Shih, Po Jen; Lee, Wnag Lin; Dai, Ching Liang |
| 國立成功大學 |
2017 |
Fabrication and characterization of GaN ultraviolet photodetector prepared by growing on geometrical patterned sapphire substrate
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Liu, K.-T.;Chang, S.-J.;Wu, S. |
| 元智大學 |
Mar-21 |
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga2O3 Gate Insulator Layer
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李清庭; Lee, Hsin-Ying; Chang, Ting-Wei; Chang, Edward Yi; Rorsman, Niklas |
| 國立成功大學 |
2021 |
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga2O3 Gate Insulator Layer
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Lee;Hsin-Ying;Chang;Ting-Wei;Chang;Yi, Edward;Rorsman;Niklas;Lee;Ching-Ting |
| 國立成功大學 |
2021 |
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Recessed-Gate and GaO Gate Insulator Layer
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Lee, H.-Y.;Chang, T.-W.;Chang, E.Y.;Rorsman, N.;Lee, C.-T. |
Showing items 418406-418415 of 2348487 (234849 Page(s) Totally) << < 41836 41837 41838 41839 41840 41841 41842 41843 41844 41845 > >> View [10|25|50] records per page
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