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Institution	Date	Title	Author
國立臺灣科技大學	2010	Fully probabilistic framework for evaluating excavation-induced damage potential of adjacent buildings	Juang C.H.; Schuster M.; Ou C.-Y; Phoon K.K.
國立交通大學	2014-12-08T15:42:20Z	Fully process-compatible layout design on bond pad to improve wire bond reliability in CMOS ICs	Ker, MD; Peng, JJ
國立高雄應用科技大學	2012-01-03	Fully quantitative characterization of CMOS–MEMS polysilicon/titanium thermopile infrared sensors	Chung-Nan Chen
國立交通大學	2014-12-08T15:33:39Z	Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate	Hsu, Hsiao-Hsuan; Chang, Chun-Yen; Cheng, Chun-Hu; Yu, Shu-Hung; Su, Ching-Yuan; Su, Chung-Yen
國立交通大學	2014-12-08T15:40:03Z	Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs	Yu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL
國立交通大學	2014-12-08T15:26:18Z	Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs	Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL
國立交通大學	2014-12-08T15:40:57Z	Fully silicided NiSi gate on La2O3 MOSFETs	Lin, CY; Ma, MW; Chin, A; Yeo, YC; Zhu, CX; Li, MF; Kwong, DL
國立成功大學	2019-07	Fully sintered alumina with a higher Vickers hardness prepared using a gel-casting process	Lee;Kuo-Yang;Chen;Chih-Cheng;Hsiang;Hsing-I;Yen;Fu-Su;Huang;Chi-Yuen
臺大學術典藏	2019-12-27T06:48:19Z	Fully solution-processed, transparent organic power-generating polarizer	Chou, W.-Y.; Hsu, F.-C.; Chen, Y.-F.; Chou, W.-Y.; YANG-FANG CHEN et al.
國立交通大學	2014-12-08T15:01:49Z	Fully static processor optimal assignment of data-flow graphs	Ho, YC; Tsay, JC

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