| 國立交通大學 |
2014-12-12T02:07:11Z |
GaAs/AlGaAs量子井電子傳輸的幾何效應
|
陳益德; CHEN,YI-DE; 汪大暉; WANG,DA-HUI |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
GaAs/AlxGa1- xAs quantum well infra-red photodetectors with cutoff wavelength $λ$c= 14.9 $μ$m
|
Zussman, A; Levine, BF; Hong, Mingyi; Mannaerts, JP; MINGHWEI HONG |
| 國立交通大學 |
2014-12-12T01:53:33Z |
GaAs/In(0.5)Ga(0.5)P 雙接面太陽能電池磊晶與製程的設計
|
林志遠; Lin, Chih Yuan; 余沛慈; Yu, Pei Chen |
| 國立臺灣大學 |
2009 |
GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer
|
Lin, Y.R.; Lin, H.H.; Chu, J.H. |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer
|
Y. R. Lin, H. H. Lin,;J. H. Chu; Y. R. Lin, H. H. Lin,; J. H. Chu; HAO-HSIUNG LIN |
| 國立成功大學 |
2009-03-16 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
|
Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
|
Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 國立交通大學 |
2015-11-26T00:57:08Z |
GaAsN/GaAs量子井中 光激發引致電滯曲線於不同溫度與電場之分析
|
廖思雅; Liao, Siya; 陳振芳; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-12T02:43:13Z |
GaAsN/GaAs量子井結構中光激發載子暫存降引致光電流抑制效應：等效電路RC時間常數分析
|
黃志斌; Huang, Chih-Pin; 陳振芳; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-12T01:57:30Z |
GaAsN/GaAs量子井結構中光激發載子的光電容與光電流分析
|
趙俊泓; 陳振芳 |
| 國立交通大學 |
2018-01-24T07:40:28Z |
GaAsN/GaAs量子井蕭基二極體在照光下之光電容模擬
|
許雨堤; 陳振芳; Hsu, Yu-Ti; Chen, Jenn-Fang |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
GaAsPSb and its application to heterojunction bipolar transistors
|
Y. C. Chin,;H. H. Lin,;H. S. Guo,;C. H. Huang,; Y. C. Chin,; H. H. Lin,; H. S. Guo,; C. H. Huang,; HAO-HSIUNG LIN |
| 國立成功大學 |
2012-05-28 |
GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy
|
Hwang, J. S.; Tsai, J. T.; Su, I. C.; Lin, H. C.; Lu, Y. T.; Chiu, P. C.; Chyi, J. I. |
| 國立臺灣海洋大學 |
2017 |
GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement
|
David Jui-Yang Feng;Yen-Ju Lin;Yun-Cheng Ku;Han-Yun Jhang;Tzy-Rong Lin;Mao-Kuen Kuo |
| 國立臺灣海洋大學 |
2017-03 |
GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement
|
Mao-Kuen Kuo; David Jui-Yang Feng; Yen-Ju Lin; Yun-Cheng Ku; Han-Yun Jhang; Tzy-Rong Lin |
| 臺大學術典藏 |
2020-04-28T07:14:57Z |
GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement
|
Feng, D.J.-Y.; Lin, Y.-J.; Ku, Y.-C.; Jhang, H.-Y.; Lin, T.-R.; Kuo, M.-K.; MAO-KUEN KUO |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
GaAsSb/GaAs quantum wells grown by MBE
|
H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2003-09 |
GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser
|
Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren; Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren |
| 國立臺灣大學 |
2003-09 |
GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser
|
Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser
|
H. H. Lin,; P. W. Liu,; J. R. Chen,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers
|
HAO-HSIUNG LIN; H. H. Lin,; P. W. Liu,; G. H. Liao, |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes
|
H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2007-04-30 |
GaAsSb/GaAs量子結構與元件(2/2)
|
林浩雄; 林浩雄 |
| 國立臺灣大學 |
2007-04-30 |
GaAsSb/GaAs量子結構與元件(2/2)
|
林浩雄 |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
GaAsSbN grown on GaAs by gas source molecular beam epitaxy
|
T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
