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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T07:35:54Z	GaAs-based transverse junction superluminescent diode at 1.1um wavelength region	Guol, S.-H.;Chou, M.-G.;Wang, J.-H.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Wang, J.-H.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN
臺大學術典藏	2018-09-10T08:14:03Z	GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength	Guol, S.-H.;Chou, M.-G.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN
臺大學術典藏	2010	GaAs-Based Transverse Junction Superluminescent Diodes with Strain-Compensated InGaAs/GaAsP Multiple-Quantum-Wells at 1.1μm Wavelength	Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei; Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei
國立臺灣大學	2010	GaAs-Based Transverse Junction Superluminescent Diodes with Strain-Compensated InGaAs/GaAsP Multiple-Quantum-Wells at 1.1μm Wavelength	Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei
國立成功大學	1999	GAAS-BASED 微波主動元件之研究	蘇炎坤; 王永和; 王瑞祿
國立成功大學	1999	GaAs-Based 微波主動元件之研究-子計劃二：PHEMT 微波功率元件之研究	王永和
國立成功大學	1999	GAAS-BASED 微波主動元件之研究-子計畫一：HBT 高頻元件之研製	蘇炎坤
國立高雄師範大學	1998-08	GaAs-Based微波主動元件之研究---子計畫III：HBT高頻元件等效電路之研究	王瑞祿; Ruey-Lue Wang
國立高雄師範大學	1998-08	GaAs-Based微波主動元件之研究---總計畫	蘇炎坤;王永和;王瑞祿; Ruey-Lue Wang
國立高雄師範大學	1995	GaAs-InGaAs doping-channel negative-differential-resistance field-effect transistor (NDRFET)	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Wen-Shiung Lour;Yuan-Tzu Liu;Rong-Chau Liu; 蔡榮輝

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