|
|
Taiwan Academic Institutional Repository >
Browse by Title
|
Showing items 444641-444665 of 2348419 (93937 Page(s) Totally)
<< < 17781 17782 17783 17784 17785 17786 17787 17788 17789 17790 > >>
View [10|25|50] records per page
| 國立成功大學 |
2014-01 |
GaN-Based LEDs With Rough Surface and Selective KOH Etching
|
Chang, Shoou-Jinn; Chang, L. M.; Kuo, D. S.; Ko, T. K.; Hon, S. J.; Li, Shuguang |
| 國立成功大學 |
2012-02 |
GaN-Based LEDs with Sapphire Debris Removed by Phosphoric Etching
|
Chang, Shoou-Jinn; Kuo, D. S.; Lam, K. T.; Wen, K. H.; Ko, T. K.; Hon, S. J. |
| 國立成功大學 |
2012-09-24 |
GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition
|
Chen, Jiun-Ting; Lai, Wei-Chih; Chang, Yun-Chorng; Sheu, Jinn-Kong; Sen, Wen-Chih |
| 國立成功大學 |
2003-04 |
GaN-based light emitting diodes with si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer
|
Kuo, Cheng-Huang; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, Liang-Wen; Chen, Jone F.; Sheu, Jinn-Kong; Tsai, Ji-Ming |
| 國立成功大學 |
2016 |
GaN-Based Light Emitting Diodes with Two-Step Grown GaN Quantum Barriers
|
Lam, Kin-Tak; Lin, Wei-Heng; Chang, Shoou-Jinn |
| 國立成功大學 |
2012-02-15 |
GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer
|
Yen, Cheng-Hsiung; Lai, Wei-Chih; Yang, Ya-Yu; Wang, Chun-Kai; Ko, Tsun-Kai; Hon, Schang-Jing; Chang, Shoou-Jinn |
| 國立成功大學 |
2008-08 |
GaN-Based Light-Emitting Diodes Grown on Photonic Crystal-Patterned Sapphire Substrates by Nanosphere Lithography
|
Su, Yan-Kuin; Chen, Jian-Jhong; Lin, Chuing-Liang; Chen, Shi-Ming; Li, Wen-Liang; Kao, Chien-Chih |
| 國立成功大學 |
2013-08-01 |
GaN-Based Light-Emitting Diodes on Electrochemically Etched n(-)-GaN Template
|
Lai, Wei-Chih; Yen, Cheng-Hsiung; Li, Jhen-Zih; Yang, Ya-Yu; Cheng, Hsyi-En; Chang, Shoou-Jinn; Li, Shuguang |
| 國立交通大學 |
2014-12-08T15:14:50Z |
GaN-based light-emitting diodes prepared on vicinal sapphire substrates
|
Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Cheng, Y. C.; Lin, W. J. |
| 國立成功大學 |
2007-02 |
GaN-based light-emitting diodes prepared on vicinal sapphire substrates
|
Lin, J. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Lan, W. H.; Huang, K. C.; Chen, W. R.; Cheng, Y. C.; Lin, W. J. |
| 國立成功大學 |
2016-02 |
GaN-Based Light-Emitting Diodes Prepared With Shifted Laser Stealth Dicing
|
Chang, Shoou-Jinn Chang; Chang, L. M.; Chen, J. Y.; Hsu, C. S.; Kuo, D. S.; Shen, C. F.; Chen, Wei-Shou; Ko, T. K. |
| 國立成功大學 |
2012-12 |
GaN-based light-emitting diodes with a thermally stable mirror structure underneath an insulating SiO2 layer
|
Lin, N. -M.; Shei, S. -C.; Chang, S. -J. |
| 國立成功大學 |
2011-09-01 |
GaN-Based Light-Emitting Diodes With Air Gap Array and Patterned Sapphire Substrate
|
Lai, Wei-Chih; Yang, Ya-Yu; Chen, Ying-Hong; Sheu, Jinn-Kong |
| 國立成功大學 |
2013-11 |
GaN-Based Light-Emitting Diodes With AlGaN Strain Compensation Buffer Layer
|
Chang, Shoou-Jinn; Lu, Lucent; Lin, Yu-Yao; Li, Shuguang |
| 國立成功大學 |
2012-07 |
GaN-based light-emitting diodes with embedded air void arrays
|
Shen, Yue; Li, Shuguang; Kuo, De-Shan; Chang, Shoou-Jinn; Lam, Kin-Tak; Wen, Kuo-Hsun |
| 國立交通大學 |
2014-12-08T15:35:55Z |
GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer
|
Lai, Wei-Chih; Lin, Chih-Nan; Lai, Yi-Chun; Yu, Peichen; Chi, Gou Chung; Chang, Shoou-Jinn |
| 國立交通大學 |
2014-12-08T15:40:15Z |
GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer
|
Chen, LC; Hsu, CY; Lan, WH; Teng, SY |
| 國立成功大學 |
2014-02 |
GaN-Based Light-Emitting Diodes With Staircase Electron Injector Structure
|
Chang, Shoou-Jinn; Lin, Yu-Yao |
| 國立成功大學 |
2013-05 |
GaN-Based Light-Emitting Diodes With Step Graded-Refractive Index (ZnO)(x)(SiO2)(1-x) Micropillar Array
|
Chang, Hung-Ming; Yang, Ya-Yu; Lai, Wei-Chih; Li, Shuguang; Lin, Yu-Ru; Jiao, Zhi-Yong; Chang, Shoou-Jinn |
| 國立交通大學 |
2014-12-08T15:34:56Z |
GaN-Based Light-Emitting-Diode With a p-InGaN Layer
|
Chen, P. H.; Kuo, Cheng-Huang; Lai, W. C.; Chen, Yu An; Chang, L. C.; Chang, S. J. |
| 國立成功大學 |
2014-03 |
GaN-Based Light-Emitting-Diode With a p-InGaN Layer
|
Chen, P. H.; Kuo, Cheng-Huang; Lai, W. C.; Chen, Yu An; Chang, L. C.; Chang, S. J. |
| 國立交通大學 |
2014-12-08T15:21:42Z |
GaN-based microcavity polariton light emitting diodes
|
Lu, Tien-Chang; Lai, Ying-Yu; Huang, Si-Wei; Chen, Jun-Rong; Wu, Yung-Chi; Lin, Shiang-Chi; Wang, Shing-Chung; Yamamoto, Yoshihisa |
| 國立成功大學 |
2012-10 |
GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication
|
Wun, Jhih-Min; Lin, Che-Wei; Chen, Wei; Sheu, J. -K.; Lin, Ching-Liang; Li, Yun-Li; Bowers, John E.; Shi, Jin-Wei; Vinogradov, Juri; Kruglov, Roman; Ziemann, Olaf |
| 元智大學 |
2023-11-27 |
GaN-based monolithic electronics integrated using complementary metal-oxide-semiconductor D-mode and E-mode high-electron mobility transistors
|
李清庭; H. J. Hsieh; H. Y. Lee |
| 國立成功大學 |
2008-11 |
GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates
|
Chang, Shoou-Jinn; Jhou, Y. D.; Lin, Y. C.; Wu, San-Lein; Chen, C. H.; Wen, Ten-Chin; Wu, L. W. |
Showing items 444641-444665 of 2348419 (93937 Page(s) Totally)
<< < 17781 17782 17783 17784 17785 17786 17787 17788 17789 17790 > >>
View [10|25|50] records per page
|
