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Showing items 445646-445655 of 2348609 (234861 Page(s) Totally)
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| 國立臺灣大學 |
2006 |
Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO2 high-k gate dielectric considering vertical and fringing displacement effects using 2-D Simulation
|
Lin, Yu-Sheng; Lin, Chia-Hong; Kuo, J.B.; Su, Ke-Wei |
| 國立交通大學 |
2014-12-16T06:14:10Z |
Gate controlled field emission triode and process for fabricating the same
|
Lee Chia-Ying; Li Seu-Yi; Lin Pang; Tseng Tseung-Yuan |
| 國立交通大學 |
2014-12-16T06:14:25Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng; Tseung-Yuen; Lee; Chia-Ying; Li; Seu-Yi; Lin; Pang |
| 國立交通大學 |
2014-12-16T06:15:47Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng, Tseung-Yuan; Lee, Chia-Ying; Li, Seu-Yi; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T06:16:01Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng, Tseung-Yuen; Lee, Chia-Ying; Li, Seu-Yi; Lin, Pang |
| 國立成功大學 |
2008-07-31 |
Gate current dependent hot-carrier-induced degradation in LDMOS transistors
|
Chen, Jone F.; Tian, Kuen-Shiuan; Chen, Shiang-Yu; Lee, J. R.; Wu, Kuo-Ming; Huang, T. Y.; Liu, C. M. |
| 國立交通大學 |
2015-07-21T08:31:06Z |
Gate Current Variation: A New Theory and Practice on Investigating the Off-State Leakage of Trigate MOSFETs and the Power Dissipation of SRAM
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Hsieh, E. R.; Lin, S. T.; Chung, Steve S.; Huang, R. M.; Tsai, C. T.; Jung, L. T. |
| 國立交通大學 |
2014-12-16T06:16:04Z |
GATE DIELECTRIC STRUCTURE AND AN ORGANIC THIN FILM TRANSISTOR BASED THEREON
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Chen, Fang-Chung; Chuang, Chiao-Shun; Lin, Yung-Sheng |
| 國立交通大學 |
2014-12-08T15:37:53Z |
Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass
|
Lee, Wei-Han; Chen, Ming-Jer |
| 臺大學術典藏 |
2018-09-10T06:37:17Z |
Gate Drive for GTO Devices
|
S. Chin;D. Y. Chen; S. Chin; D. Y. Chen; DAN CHEN |
Showing items 445646-445655 of 2348609 (234861 Page(s) Totally)
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