| 臺大學術典藏 |
2018-09-10T04:59:04Z |
Gate Misalignment Effect Related Capacitance Behavior of a 100nm DG FD SOI NMOS Device with n+/p+ Poly Top/Bottom Gate
|
C. H. Hsu; C. P. Yang; JAMES-B KUO; J. B. Kuo |
| 國立成功大學 |
2020 |
Gate operation for habitat-oriented water management at Budai Salt Pan Wetland in Taiwan
|
Wang, H.-W.;Kuo, P.-H.;Dodd, A.E. |
| 國立交通大學 |
2014-12-16T06:14:04Z |
Gate oxide breakdown-withstanding power switch structure
|
Yang Hao-I; Chuang Ching-Te; Hwang Wei |
| 國立交通大學 |
2014-12-16T06:15:14Z |
GATE OXIDE BREAKDOWN-WITHSTANDING POWER SWITCH STRUCTURE
|
YANG Hao-I; Chuang Ching-Te; Hwang Wei |
| 國立交通大學 |
2014-12-08T15:45:36Z |
Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7
|
Wu, YH; Chin, A |
| 國立臺灣大學 |
2010 |
Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling
|
Ho, Ching Yuan; Shih, Kai-Yao; He, Jr Hau |
| 中原大學 |
2010-04 |
Gate Oxide Weat out Using Novel Polysilazane-base Inorganic as Nano-scaling Shallow Trench Filling
|
Ching Yuan. Ho;Kai-Yao.Shih ; jr Hau He, |
| 國立交通大學 |
2014-12-08T15:27:45Z |
Gate oxynitride grown in N2O and annealed in no using rapid thermal processing
|
Sun, SC; Chen, CH; Lou, JC; Yen, LW; Lin, CJ |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
|
Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2019-04-02T06:00:51Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
|
Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2015-12-04T07:03:12Z |
GATE STRUCTURE
|
CHANG Yi; KUO Chien-I; HSU Heng-Tung |
| 國立成功大學 |
2017 |
Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT
|
Liu, H.-Y.;Lee, C.-S.;Lin, C.-W.;Chiang, M.-H.;Hsu, W.-C. |
| 國立交通大學 |
2014-12-16T06:16:19Z |
Gate structure of metal oxide semiconductor field effect transistor
|
Bing-Yue, Tsui; Chih-Feng, Huang |
| 國立交通大學 |
2019-04-03T06:43:59Z |
Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film
|
Chiu, Shao-Pin; Yamanouchi, Michihiko; Oyamada, Tatsuro; Ohta, Hiromichi; Lin, Juhn-Jong |
| 臺大學術典藏 |
2018-09-10T08:18:06Z |
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect
|
H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
| 臺大學術典藏 |
2018-09-10T07:41:37Z |
Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect
|
H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
| 國立高雄師範大學 |
2010 |
Gate voltage swing enhancement of an InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels
|
Jung-Hui Tsai;Wen-Shiung Lour;Chia-Hua Huang;Sheng-Shiun Ye;Yung-Chun Ma; 蔡榮輝 |
| 國立臺灣海洋大學 |
2010-10-28 |
Gate voltage swing enhancement of InGaP/ InGaAs pseudomorphic HFET with low-to-high double doping channels
|
J.-H. Tsai; W.-S. Lour; C.-H. Huang; S.-S. Ye; Y.-C. Ma |
| 臺大學術典藏 |
2018-09-10T07:04:10Z |
Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
|
Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU |
| 臺大學術典藏 |
2020-01-13T08:22:40Z |
Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
|
Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; MING-HAN LIAO |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels
|
Tsai, Jung-Ruey; Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 臺大學術典藏 |
2018-09-10T14:58:05Z |
Gate-all-around Ge FETs
|
Liu, C.W.;Chen, Y.-T.;Hsu, S.-H.; Liu, C.W.; Chen, Y.-T.; Hsu, S.-H.; CHEE-WEE LIU |
| 國立交通大學 |
2014-12-08T15:11:50Z |
Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels
|
Su, Chun-Jung; Tsai, Tzu-I; Liou, Yu-Ling; Lin, Zer-Ming; Lin, Horng-Chih; Chao, Tien-Sheng |
| 國立交通大學 |
2015-12-02T02:59:20Z |
Gate-all-around poly-Si nanowire junctionless thin-film transistors with multiple channels
|
Tso, Chia-Tsung; Liu, Tung-Yu; Sheu, Jeng-Tzong |
| 國立交通大學 |
2014-12-08T15:27:28Z |
Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels
|
Kang, Tsung-Kuei; Liao, Ta-Chuan; Lin, Chia-Min; Liu, Han-Wen; Wang, Fang-Hsing; Cheng, Huang-Chung |
