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Institution Date Title Author
國立交通大學 2014-12-08T15:30:22Z Gate-All-Around Single-Crystal-Like Poly-Si Nanowire TFTs With a Steep-Subthreshold Slope Liu, Tung-Yu; Lo, Shen-Chuan; Sheu, Jeng-Tzong
國立成功大學 2004-11-22 Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors Chen, Y. J.; Hsu, Wei-Chou; Lee, C. S.; Wang, T. B.; Tseng, C. H.; Huang, J. C.; Huang, D. H.; Wu, C. L.
臺大學術典藏 2018-09-10T14:57:38Z Gate-bias stress stability of P-type SnO thin-film transistors fabricated by RF-sputtering Chiu, I.-C.;Cheng, I.-C.; Chiu, I.-C.; Cheng, I.-C.; I-CHUN CHENG
國立交通大學 2015-12-04T07:03:11Z GATE-BOOSTING RECTIFIER AND METHOD OF PERMITTING CURRENT TO FLOW IN FAVOR OF ONE DIRECTION WHEN DRIVEN BY AC INPUT VOLTAGE Wang Yu-Jiu; Liao I-No; Tsai Chao-Han; Pakasiri Chatrpol
國立中山大學 2006 Gate-controlled spin splitting in GaN/AlN quantum wells Ikai Lo;W.T. Wang;M.H. Gao;J.K. Tsai;S.F. Tsay;J.C. Chiang
國立中山大學 2006 Gate-controlled Spin Splitting in GaN/AlN Quantum Wells Ikai Lo;W.T. Wang;M.H. Gau;S.F. Tsay;Jih-Chen Chiang
國立中山大學 2006 Gate-Controlled Spin Splitting in GaN/AlN Quantum Wells Ikai Lo;W.T. Wang;M.H. Gau;J.K. Tsai;S.F. Tsay;J.C. Chiang
國立交通大學 2014-12-08T15:17:41Z Gate-controlled ZnO nanowires for field-emission device application Li, SY; Lee, CY; Lin, P; Tseng, TY
國立交通大學 2014-12-08T15:31:00Z Gate-first n-MOSFET with a sub-0.6-nm EOT gate stack Cheng, C. H.; Chou, K. I.; Chin, A.
國立交通大學 2014-12-08T15:47:59Z Gate-First TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs Using Laser Annealing Chen, W. B.; Wu, C. H.; Shie, B. S.; Chin, Albert

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