| 國立交通大學 |
2014-12-08T15:29:38Z |
Growth of gold nanowires on flexible substrate for highly sensitive biosensing: detection of thrombin as an example
|
Chen, Yu-Liang; Lee, Chi-Young; Chiu, Hsin-Tien |
| 元智大學 |
2011-09-19 |
Growth of graphene thin-films by polymer precursor-based chemical vapor deposition under atmospheric pressure
|
G.N. Shi; N.W. Pu; Y.M. Liu; N.T. Wen; Y. Sung; M.D. Ger |
| 國立臺灣科技大學 |
2004 |
Growth of High Conformal Cu Thin Films by Two-Step MOCVD
|
李欣浤;郭俞麟;李嘉平 |
| 國立成功大學 |
2012-06 |
Growth of high performance single grain Y-Ba-Cu-O Bulk superconductor with sol-gel derived Y2Ba4CuAgO addition
|
Chen, In-Gann; Chen, Po-Wei; Chen, Shih-Yun; Wu, Maw-Kuen; Liu, Chien-ju |
| 淡江大學 |
2005-05 |
Growth of high quality AlN on diamond using Ti buffer layer
|
林諭男 |
| 淡江大學 |
2006-02 |
Growth of high quality AlN thin films on diamond using TiN/Ti buffer layer
|
林諭男; Lin, I-nan |
| 臺大學術典藏 |
2018-09-10T06:56:07Z |
GROWTH OF HIGH TC-SUPERCONDUCTING Y-BA-CU-O THIN-FILMS BY A CHEMICAL SPRAY PYROLYSIS METHOD
|
Chu, J. J.;Liu, R. S.;Wu, P. T.;Chen, L. J.; Chu, J. J.; Liu, R. S.; Wu, P. T.; Chen, L. J.; RU-SHI LIU |
| 國立交通大學 |
2014-12-08T15:11:22Z |
Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions
|
Huang, Ting-Kai; Chen, Ying-Chieh; Ko, Hsin-Chun; Huang, Hsin-Wei; Wang, Chia-Hsin; Lin, Huang-Kai; Chen, Fu-Rong; Kai, Ji-Jung; Lee, Chi-Young; Chiu, Hsin-Tien |
| 元智大學 |
2009-01 |
Growth of high-density InN nanodots by pulsed MOVPE
|
柯文政; 林文仁; 李大青; 林家慶 |
| 國立臺灣海洋大學 |
2002-03-15 |
Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
|
Fu-Hsiang Yang;Jih-Sheng Hwang;Ying-Jay Yang;Kuei-Hsien Chen;Jih-Hsiang Wang |
| 國立臺灣大學 |
2002 |
Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
|
Yang, Fu-Hsiang; Hwang, Jih-Sheng; Yang, Ying-Jay; Chen, Kuei-Hsien; Wang, Jih-Hsiang |
| 國立交通大學 |
2014-12-08T15:33:45Z |
Growth of high-quality epitaxial ZnO films on (10-10) sapphire by atomic layer deposition with flow-rate interruption method
|
Huang, Jheng-Ming; Ku, Ching-Shun; Lee, Hsin-Yi; Lin, Chih-Ming; Chen, San-Yuan |
| 國立交通大學 |
2014-12-08T15:25:54Z |
Growth of high-quality GaAs epitaxial layers on Si substrite by using a novel GeSi buffer strucuture
|
Chang, EY; Luo, GL; Yang, TH |
| 國立交通大學 |
2014-12-08T15:40:52Z |
Growth of high-quality Ge epitaxial layers on Si(100)
|
Luo, GL; Yang, TH; Chang, EY; Chang, CY; Chao, KA |
| 國立交通大學 |
2014-12-08T15:21:13Z |
Growth of High-Quality In(0.4)Ga(0.6)N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
|
Binh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh |
| 國立交通大學 |
2018-08-21T05:54:15Z |
Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications
|
Huynh, Sa Hoang; Ha, Minh Thien Huu; Do, Huy Binh; Nguyen, Tuan Anh; Yu, Hung Wei; Luc, Quang Ho; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:57:55Z |
Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
|
Binh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh |
| 國立臺灣大學 |
2006 |
Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs
|
Chen, P. S.; Lee, S. W.; Lee, M. H.; Liu, C. W. |
| 臺大學術典藏 |
2018-09-10T04:31:01Z |
Growth of high-Tc YBa2Cu3Oy films with an off-axis sputtering configuration
|
Wang, L.M.;Sung, H.H.;Chern, J.H.;Yang, H.C.;Horng, H.E.; Wang, L.M.; Sung, H.H.; Chern, J.H.; Yang, H.C.; Horng, H.E.; LI-MIN WANG |
| 國立交通大學 |
2019-04-02T06:01:00Z |
Growth of Highly (111)-Oriented Nanotwinned Cu with the Addition of Sulfuric Acid in CuSO4 Based Electrolyte
|
Tseng, Chih-Han; Chen, Chih |
| 國立成功大學 |
2012-01-01 |
Growth of highly c-axis oriented (B, Al)N film on diamond for high frequency surface acoustic wave devices
|
Song, Jen-Hao; Huang, Jow-Lay; Omori, Tatsuya; Sung, James C.; Wu, Sean; Lu, Horng-Hwa; Lii, Ding-Fwu |
| 臺大學術典藏 |
2018-09-10T15:20:17Z |
Growth of highly conductive Ga-doped ZnO nanoneedles
|
CHIH-CHUNG YANG; Yao, Y.-F.;Tu, C.-G.;Chang, T.-W.;Chen, H.-T.;Weng, C.-M.;Su, C.-Y.;Hsieh, C.;Liao, C.-H.;Kiang, Y.-W.;Yang, C.C.; Yao, Y.-F.; Tu, C.-G.; Chang, T.-W.; Chen, H.-T.; Weng, C.-M.; Su, C.-Y.; Hsieh, C.; Liao, C.-H.; Kiang, Y.-W.; Yang, C.C. |
| 臺大學術典藏 |
2020-06-11T06:12:04Z |
Growth of highly conductive Ga-doped ZnO nanoneedles
|
Yao, Y.-F.;Tu, C.-G.;Chang, T.-W.;Chen, H.-T.;Weng, C.-M.;Su, C.-Y.;Hsieh, C.;Liao, C.-H.;Kiang, Y.-W.;Yang, C.C.; Yao, Y.-F.; Tu, C.-G.; Chang, T.-W.; Chen, H.-T.; Weng, C.-M.; Su, C.-Y.; Hsieh, C.; Liao, C.-H.; Kiang, Y.-W.; Yang, C.C.; YEAN-WOEI KIANG |
| 國立交通大學 |
2014-12-08T15:05:26Z |
GROWTH OF HIGHLY ORIENTED TIN OXIDE THIN-FILMS BY LASER EVAPORATION DEPOSITION
|
DAI, CM; SU, CS; CHUU, DS |
| 國立交通大學 |
2014-12-08T15:03:56Z |
GROWTH OF HIGHLY ORIENTED ZRTIO(4) THIN-FILMS BY RADIOFREQUENCY MAGNETRON SPUTTERING
|
CHANG, DA; LIN, P; TSENG, TY |
| 國立交通大學 |
2014-12-08T15:17:46Z |
Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser
|
Chen, IL; Hsu, WC; Lee, TD; Kuo, HC; Su, KH; Chiou, CH; Wang, JM; Chang, YH |
| 國立成功大學 |
2006-01 |
Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser
|
Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Kuo, Hao-Chung; Su, Ke-Hua; Chiou, Chih-Hung; Wang, Jin-Mei; Chang, Yu-Hsiang |
| 國立臺灣大學 |
2001-01 |
Growth of Highly Transparent Nano-crystalline Diamond Films and a Spectroscopic Study of the Growth
|
Chen, L. C.; Kichambare, P. D.; Chen, K. H.; Wu, J.-J.; Yang, J. R.; Lin, S. T. |
| 臺大學術典藏 |
2022-08-09T03:51:00Z |
Growth of highly transparent nano-crystalline diamond films by microwave CVD
|
Bhusari D.M.; Chen K.H.; Yang J.R.; Lin S.T.; Wang T.Y.; Chen L.C.; Bhusari D.M.; Chen K.H.; Yang J.R.; Lin S.T.; Wang T.Y.; Chen L.C.; LI-CHYONG CHEN |
| 臺大學術典藏 |
2020-01-06T03:11:08Z |
Growth of highly transparent nanocrystalline diamond films and a spectroscopic study of the growth
|
Chen, L. C.; Kichambare, P. D.; Chen, K. H.; Wu, J. J.; Yang, J. R.; Lin, S. T.; SHIANG-TAI LIN |
| 中原大學 |
2003-02 |
Growth of Human Endothelial Cells on Different Concentrations of Gly-Arg-Gly-Asp Grafted Chitosan Surface
|
Tze-Wen Chung;Ya-Fen Lu;Hsin-Ya wang;Weng;Weng-Pin Chen;Shoei-Shen Wang;Yeong-Shang Lin;Shu-Hsun Chu |
| 臺大學術典藏 |
2018-09-10T04:37:37Z |
Growth of human endothelial cells on different concentrations of Gly-Arg-Gly-Asp grafted chitosan surface
|
Chung, T.-W. and Lu, Y.-F. and Wang, H.-Y. and Chen, W.-P. and Wang, S.-S. and Lin, Y.-S. and Chu, S.-H.; SHOEI-SHEN WANG |
| 臺大學術典藏 |
2020-03-05T08:38:22Z |
Growth of human endothelial cells on different concentrations of Gly-Arg-Gly-Asp grafted chitosan surface
|
Chu S.-H.; Lin Y.-S.; SHOEI-SHEN WANG; Chen W.-P.; Wang H.-Y.; Lu Y.-F.; Chung T.-W.; Chung T.-W.;Lu Y.-F.;Wang H.-Y.;Chen W.-P.;Shoei-Shen Wang;Lin Y.-S.;Chu S.-H. |
| 臺大學術典藏 |
2020-03-05T08:38:26Z |
Growth of human endothelial cells on photochemically grafted Gly-Arg-Gly-Asp (GRGD) chitosans
|
Chung T.-W.;Lu Y.-F.;Shoei-Shen Wang;Lin Y.-S.;Chu S.-H.; Chung T.-W.; Lu Y.-F.; SHOEI-SHEN WANG; Lin Y.-S.; Chu S.-H. |
| 國立臺灣大學 |
2002 |
Growth of Human Endothelial Cells on Photochemically Grafted Gly–Arg– Gly–Asp (Grgd) Chitosans
|
王水深; WANG, SHOEI-SHEN |
| 國立成功大學 |
2006-03-01 |
Growth of hydrogen-free diamond-like carbon films by a particle-free hollow-cathode arc ion plating system
|
Cheng, Chiao-Yang; Hong, Franklin Chau-Nan |
| 國立臺灣海洋大學 |
2016 |
Growth of Hydrothermally Derived CdS-Based Nanostructures with Various Crystal Features and Photoactivated Properties
|
Yuan-Chang Liang;Tsai-Wen Lung |
| 臺大學術典藏 |
2002-07-31 |
Growth of III-V Semiconductor Quantum Dots and Device Application
|
毛明華; 毛明華 |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
Growth of InAs quantum dots with light emission at 1.3 m
|
F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm
|
F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:02Z |
Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy
|
J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2001 |
Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy
|
Wang, Jyh-Shyang; Lin, Hao-Hsiung; Song, Li-Wei; Chen, Guan-Ru; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Song, Li-Wei; Chen, Guan-Ru |
| 國立臺灣大學 |
2001 |
Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy
|
Wang, Jyh-Shyang; Lin, Hao-Hsiung; Song, Li-Wei; Chen, Guan-Ru |
| 南台科技大學 |
1997 |
Growth of InAsP Compound Semiconductor by Metal Organic Chemical Vapor Deposition
|
管鴻; W.T. Hrong; H. Kuan |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy
|
G. Tsai; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 國立臺灣大學 |
2005-05 |
Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy
|
Tsai, Gene; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2004 |
Growth of InGaAs-capped InAs Quantum Dots Characterized by Atomic Force Microscope and Scanning Electron Microscope
|
Chen, Shen-de; Tsai, Chiou-yun; Lee, Si-chen |
| 國立成功大學 |
2004-05 |
Growth of InGaN self-assembled quantum dots and their application to photodiodes
|
Ji, L. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Tsai, S. I.; Hung, S. C.; Chuang, R. W.; Fang, T. H.; Tsai, T. Y. |
| 國立成功大學 |
2013-07 |
Growth of InN Nanorods on Glass Substrates by Molecular Beam Heteroepitaxy
|
Lee, Kai-Hsuan; Chang, Sheng-Po; Lu, Kuang-Wei; Chang, Ping-Chuan; Chang, Shoou-Jinn; Chen, Tse-Pu; Shiu, Hung-Wei; Chang, Lo-Yueh; Chen, Chia-Hao |
| 國立成功大學 |
2012-05-15 |
Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses
|
Liu, K. W.; Young, S. J.; Chang, S. J.; Hsueh, T. H.; Chen, Y. Z.; Chen, K. J.; Hung, H.; Wang, S. M.; Wu, Y. L. |
